All MOSFET. SI3900DV Datasheet

 

SI3900DV MOSFET. Datasheet pdf. Equivalent

Type Designator: SI3900DV

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.83 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 30 nS

Maximum Drain-Source On-State Resistance (Rds): 0.125 Ohm

Package: TSOP-6

SI3900DV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SI3900DV Datasheet (PDF)

1.1. si3900dv.pdf Size:198K _vishay

SI3900DV
SI3900DV

Si3900DV Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.125 at VGS = 4.5 V 2.4 20 • TrenchFET® Power MOSFET 0.200 at VGS = 2.5 V 1.8 • Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View G1 D1 1 6 D1 D2 3 mm S2 S1 5 2 G2 D2 3 4 G1 G2 2.85 mm S1

5.1. si3909dv.pdf Size:196K _vishay

SI3900DV
SI3900DV

Si3909DV Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (A) Definition 0.200 at VGS = - 4.5 V 1.8 TrenchFET Power MOSFETs: 2.5 V Rated 0.235 at VGS = - 3.6 V - 20 1.6 Compliant to RoHS Directive 2002/95/EC 0.340 at VGS = - 2.5 V 1.3 TSOP-6 S1 S2 Top View G1 D1 1 6 3

5.2. si3905dv.pdf Size:195K _vishay

SI3900DV
SI3900DV

Si3905DV Vishay Siliconix Dual P-Channel 8-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (A) Definition 0.125 at VGS = - 4.5 V 2.5 TrenchFET Power MOSFETs: 1.8 V Rated 0.175 at VGS = - 2.5 V - 8 2.0 Compliant to RoHS Directive 2002/95/EC 0.265 at VGS = - 1.8 V 1.7 TSOP-6 S1 S2 Top View G1 D1 1 6 3 m

Datasheet: SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 , PT4410 , IRFP260N , SI2301 , SI2305 , XP152A12COMR , AO3401 , AO3407 , PT4435 , SM103 , SM104 .

 
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