SI3900DV Datasheet and Replacement
Type Designator: SI3900DV
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TSOP-6
SI3900DV substitution
SI3900DV Datasheet (PDF)
si3900dv.pdf

Si3900DVVishay SiliconixDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.125 at VGS = 4.5 V 2.420 TrenchFET Power MOSFET0.200 at VGS = 2.5 V 1.8 Compliant to RoHS Directive 2002/95/ECTSOP-6Top ViewG1 D11 6D1 D23 mm S2 S152G2 D23 4G1 G22.85 mmS1
si3905dv.pdf

Si3905DVVishay SiliconixDual P-Channel 8-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.125 at VGS = - 4.5 V 2.5 TrenchFET Power MOSFETs: 1.8 V Rated 0.175 at VGS = - 2.5 V - 8 2.0 Compliant to RoHS Directive 2002/95/EC0.265 at VGS = - 1.8 V 1.7TSOP-6S1 S2Top ViewG
si3909dv.pdf

Si3909DVVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.200 at VGS = - 4.5 V 1.8 TrenchFET Power MOSFETs: 2.5 V Rated 0.235 at VGS = - 3.6 V - 20 1.6 Compliant to RoHS Directive 2002/95/EC0.340 at VGS = - 2.5 V 1.3TSOP-6S1 S2Top View
Datasheet: SI3586DV , SI3588DV , SI3590DV , SI3805DV , SI3850ADV , SI3865DDV , SI3867DV , SI3879DV , 7N60 , SI3932DV , SI3981DV , SI3993CDV , SI4004DY , SI4010DY , SI4048DY , SI4090DY , SI4100DY .
History: SI3495DV
Keywords - SI3900DV MOSFET datasheet
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SI3900DV replacement
History: SI3495DV



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