SI3900DV Datasheet. Specs and Replacement

Type Designator: SI3900DV  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TSOP-6

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SI3900DV datasheet

 ..1. Size:198K  vishay
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SI3900DV

Si3900DV Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.125 at VGS = 4.5 V 2.4 20 TrenchFET Power MOSFET 0.200 at VGS = 2.5 V 1.8 Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View G1 D1 1 6 D1 D2 3 mm S2 S1 5 2 G2 D2 3 4 G1 G2 2.85 mm S1 ... See More ⇒

 9.1. Size:195K  vishay
si3905dv.pdf pdf_icon

SI3900DV

Si3905DV Vishay Siliconix Dual P-Channel 8-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.125 at VGS = - 4.5 V 2.5 TrenchFET Power MOSFETs 1.8 V Rated 0.175 at VGS = - 2.5 V - 8 2.0 Compliant to RoHS Directive 2002/95/EC 0.265 at VGS = - 1.8 V 1.7 TSOP-6 S1 S2 Top View G... See More ⇒

 9.2. Size:196K  vishay
si3909dv.pdf pdf_icon

SI3900DV

Si3909DV Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.200 at VGS = - 4.5 V 1.8 TrenchFET Power MOSFETs 2.5 V Rated 0.235 at VGS = - 3.6 V - 20 1.6 Compliant to RoHS Directive 2002/95/EC 0.340 at VGS = - 2.5 V 1.3 TSOP-6 S1 S2 Top View ... See More ⇒

Detailed specifications: SI3586DV, SI3588DV, SI3590DV, SI3805DV, SI3850ADV, SI3865DDV, SI3867DV, SI3879DV, AO3407, SI3932DV, SI3981DV, SI3993CDV, SI4004DY, SI4010DY, SI4048DY, SI4090DY, SI4100DY

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