SI3900DV
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI3900DV
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.83
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 2.1
nC
trⓘ - Rise Time: 30
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125
Ohm
Package:
TSOP-6
SI3900DV
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI3900DV
Datasheet (PDF)
..1. Size:198K vishay
si3900dv.pdf 
Si3900DVVishay SiliconixDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.125 at VGS = 4.5 V 2.420 TrenchFET Power MOSFET0.200 at VGS = 2.5 V 1.8 Compliant to RoHS Directive 2002/95/ECTSOP-6Top ViewG1 D11 6D1 D23 mm S2 S152G2 D23 4G1 G22.85 mmS1
9.1. Size:195K vishay
si3905dv.pdf
Si3905DVVishay SiliconixDual P-Channel 8-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.125 at VGS = - 4.5 V 2.5 TrenchFET Power MOSFETs: 1.8 V Rated 0.175 at VGS = - 2.5 V - 8 2.0 Compliant to RoHS Directive 2002/95/EC0.265 at VGS = - 1.8 V 1.7TSOP-6S1 S2Top ViewG
9.2. Size:196K vishay
si3909dv.pdf
Si3909DVVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.200 at VGS = - 4.5 V 1.8 TrenchFET Power MOSFETs: 2.5 V Rated 0.235 at VGS = - 3.6 V - 20 1.6 Compliant to RoHS Directive 2002/95/EC0.340 at VGS = - 2.5 V 1.3TSOP-6S1 S2Top View
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