SI3900DV Datasheet. Specs and Replacement
Type Designator: SI3900DV 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TSOP-6
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SI3900DV substitution
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SI3900DV datasheet
si3900dv.pdf
Si3900DV Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.125 at VGS = 4.5 V 2.4 20 TrenchFET Power MOSFET 0.200 at VGS = 2.5 V 1.8 Compliant to RoHS Directive 2002/95/EC TSOP-6 Top View G1 D1 1 6 D1 D2 3 mm S2 S1 5 2 G2 D2 3 4 G1 G2 2.85 mm S1 ... See More ⇒
si3905dv.pdf
Si3905DV Vishay Siliconix Dual P-Channel 8-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.125 at VGS = - 4.5 V 2.5 TrenchFET Power MOSFETs 1.8 V Rated 0.175 at VGS = - 2.5 V - 8 2.0 Compliant to RoHS Directive 2002/95/EC 0.265 at VGS = - 1.8 V 1.7 TSOP-6 S1 S2 Top View G... See More ⇒
si3909dv.pdf
Si3909DV Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.200 at VGS = - 4.5 V 1.8 TrenchFET Power MOSFETs 2.5 V Rated 0.235 at VGS = - 3.6 V - 20 1.6 Compliant to RoHS Directive 2002/95/EC 0.340 at VGS = - 2.5 V 1.3 TSOP-6 S1 S2 Top View ... See More ⇒
Detailed specifications: SI3586DV, SI3588DV, SI3590DV, SI3805DV, SI3850ADV, SI3865DDV, SI3867DV, SI3879DV, AO3407, SI3932DV, SI3981DV, SI3993CDV, SI4004DY, SI4010DY, SI4048DY, SI4090DY, SI4100DY
Keywords - SI3900DV MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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