SI4010DY Datasheet. Specs and Replacement
Type Designator: SI4010DY 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 20.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 1040 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
Package: SO-8
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SI4010DY substitution
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SI4010DY datasheet
si4010dy.pdf
Si4010DY www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0034 at VGS = 10 V 31.3 30 22.5 nC Material categorization 0.0044 at VGS = 4.5 V 27.5 For definitions of compliance please see www.vishay.com/doc?99912 SO-8 APPLICATIONS ... See More ⇒
Detailed specifications: SI3865DDV, SI3867DV, SI3879DV, SI3900DV, SI3932DV, SI3981DV, SI3993CDV, SI4004DY, STF13NM60N, SI4048DY, SI4090DY, SI4100DY, SI4101DY, SI4102DY, SI4104DY, SI4108DY, SI4110DY
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