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SI4010DY Spec and Replacement


   Type Designator: SI4010DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 20.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 1040 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
   Package: SO-8

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SI4010DY Specs

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SI4010DY

Si4010DY www.vishay.com Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0034 at VGS = 10 V 31.3 30 22.5 nC Material categorization 0.0044 at VGS = 4.5 V 27.5 For definitions of compliance please see www.vishay.com/doc?99912 SO-8 APPLICATIONS ... See More ⇒

Detailed specifications: SI3865DDV , SI3867DV , SI3879DV , SI3900DV , SI3932DV , SI3981DV , SI3993CDV , SI4004DY , STF13NM60N , SI4048DY , SI4090DY , SI4100DY , SI4101DY , SI4102DY , SI4104DY , SI4108DY , SI4110DY .

History: IRF6662

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