All MOSFET. SI4010DY Datasheet

 

SI4010DY Datasheet and Replacement


   Type Designator: SI4010DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id|ⓘ - Maximum Drain Current: 20.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 1040 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm
   Package: SO-8
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SI4010DY Datasheet (PDF)

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SI4010DY

Si4010DYwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0034 at VGS = 10 V 31.330 22.5 nC Material categorization: 0.0044 at VGS = 4.5 V 27.5For definitions of compliance please see www.vishay.com/doc?99912 SO-8APPLICATIONS

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IRFB38N20D | STP656F | IRFBA1404 | ZVP3310ASTOB | UTM4052L | RJK5015DPK | IXFK24N80P

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