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SI4100DY Spec and Replacement


   Type Designator: SI4100DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.063 Ohm
   Package: SO-8

 SI4100DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4100DY Specs

 ..1. Size:241K  vishay
 si4100dy.pdf pdf_icon

SI4100DY

Si4100DY Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.063 at VGS = 10 V 6.8 TrenchFET Power MOSFET 100 9 nC 100 % UIS Tested 0.084 at VGS = 6 V 5.8 APPLICATIONS High Frequency Boost Converter LED Backlight for LCD TV SO-8 S D ... See More ⇒

 9.1. Size:241K  vishay
 si4102dy.pdf pdf_icon

SI4100DY

Si4102DY Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.158 at VGS = 10 V 3.8 TrenchFET Power MOSFET 100 4.6 nC 100 % UIS Tested 0.175 at VGS = 6 V 3.6 APPLICATIONS High Frequency Boost Converter LED Backlight for LCD TV SO-8 S D ... See More ⇒

 9.2. Size:270K  vishay
 si4108dy.pdf pdf_icon

SI4100DY

New Product Si4108DY Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.0098 at VGS = 10 V 75 36 nC 20.5 100 % Rg Tested COMPLIANT 100 % UIS Tested APPLICATIONS Primary Side Switch Half Bridge SO-8 Intermediate Bus Converter D S 1 ... See More ⇒

 9.3. Size:272K  vishay
 si4101dy.pdf pdf_icon

SI4100DY

New Product Si4101DY Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)d Qg (Typ.) 100 % Rg and UIS Tested 0.0060 at VGS = - 10 V - 25.7 Material categorization - 30 65 nC For definitions of compliance please see 0.0080 at VGS = - 4.5 V - 22.3 www.vishay.com/doc?99912 SO-8 APPLICATIONS ... See More ⇒

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Detailed specifications: SI3900DV , SI3932DV , SI3981DV , SI3993CDV , SI4004DY , SI4010DY , SI4048DY , SI4090DY , 8N60 , SI4101DY , SI4102DY , SI4104DY , SI4108DY , SI4110DY , SI4114DY , SI4116DY , SI4122DY .

History: IPI70N04S3-07

Keywords - SI4100DY MOSFET specs

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