SI4114DY Datasheet. Specs and Replacement

Type Designator: SI4114DY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 15.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 745 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: SO-8

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SI4114DY datasheet

 ..1. Size:239K  vishay
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SI4114DY

New Product Si4114DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.006 at VGS = 10 V TrenchFET Power MOSFET 20e 20 27.5 nC 100 % Rg and UIS Tested 0.007 at VGS = 4.5 V 20e Compliant to RoHS Directive 2002/95/EC APPLICATIONS Low-Si... See More ⇒

 9.1. Size:239K  vishay
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SI4114DY

New Product Si4110DY Vishay Siliconix N-Channel 80-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.013 at VGS = 10 V 80 17.3 35 nC COMPLIANT 100 % Rg Tested 100 % UIS Tested APPLICATIONS Primary Side Switch Half Bridge SO-8 Intermediate Bus Converter D S 1 ... See More ⇒

 9.2. Size:271K  vishay
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SI4114DY

New Product Si4116DY Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0086 at VGS = 10 V 18 TrenchFET Power MOSFET 100 % Rg and UIS Tested 0.0095 at VGS = 4.5 V 25 17 17.5 nC 0.0115 at VGS = 2.5 V 15.5 APPLICATIONS Synchronous Buck - Low S... See More ⇒

Detailed specifications: SI4048DY, SI4090DY, SI4100DY, SI4101DY, SI4102DY, SI4104DY, SI4108DY, SI4110DY, IRF1405, SI4116DY, SI4122DY, SI4124DY, SI4126DY, SI4128DY, SI4134DY, SI4136DY, SI4143DY

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