SI4116DY MOSFET. Datasheet pdf. Equivalent
Type Designator: SI4116DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
|Id|ⓘ - Maximum Drain Current: 12.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 305 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0086 Ohm
Package: SO-8
SI4116DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4116DY Datasheet (PDF)
si4116dy.pdf
New ProductSi4116DYVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0086 at VGS = 10 V 18 TrenchFET Power MOSFET 100 % Rg and UIS Tested0.0095 at VGS = 4.5 V 25 17 17.5 nC0.0115 at VGS = 2.5 V 15.5APPLICATIONS Synchronous Buck- Low S
si4110dy.pdf
New ProductSi4110DYVishay SiliconixN-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS 0.013 at VGS = 10 V 80 17.3 35 nCCOMPLIANT 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Primary Side Switch Half BridgeSO-8 Intermediate Bus ConverterD S1
si4114dy.pdf
New ProductSi4114DYVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.006 at VGS = 10 V TrenchFET Power MOSFET20e20 27.5 nC 100 % Rg and UIS Tested0.007 at VGS = 4.5 V 20e Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Low-Si
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: HFR1N60
History: HFR1N60
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