SI4116DY Datasheet and Replacement
Type Designator: SI4116DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
|Id| ⓘ - Maximum Drain Current: 12.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 18 nC
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 305 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0086 Ohm
Package: SO-8
SI4116DY substitution
SI4116DY Datasheet (PDF)
si4116dy.pdf

New ProductSi4116DYVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0086 at VGS = 10 V 18 TrenchFET Power MOSFET 100 % Rg and UIS Tested0.0095 at VGS = 4.5 V 25 17 17.5 nC0.0115 at VGS = 2.5 V 15.5APPLICATIONS Synchronous Buck- Low S
si4110dy.pdf

New ProductSi4110DYVishay SiliconixN-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS 0.013 at VGS = 10 V 80 17.3 35 nCCOMPLIANT 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Primary Side Switch Half BridgeSO-8 Intermediate Bus ConverterD S1
si4114dy.pdf

New ProductSi4114DYVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.006 at VGS = 10 V TrenchFET Power MOSFET20e20 27.5 nC 100 % Rg and UIS Tested0.007 at VGS = 4.5 V 20e Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Low-Si
Datasheet: SI4090DY , SI4100DY , SI4101DY , SI4102DY , SI4104DY , SI4108DY , SI4110DY , SI4114DY , MMIS60R580P , SI4122DY , SI4124DY , SI4126DY , SI4128DY , SI4134DY , SI4136DY , SI4143DY , SI4154DY .
Keywords - SI4116DY MOSFET datasheet
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