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SI4116DY Spec and Replacement


   Type Designator: SI4116DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 12.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 305 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0086 Ohm
   Package: SO-8

 SI4116DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4116DY Specs

 ..1. Size:271K  vishay
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SI4116DY

New Product Si4116DY Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0086 at VGS = 10 V 18 TrenchFET Power MOSFET 100 % Rg and UIS Tested 0.0095 at VGS = 4.5 V 25 17 17.5 nC 0.0115 at VGS = 2.5 V 15.5 APPLICATIONS Synchronous Buck - Low S... See More ⇒

 9.1. Size:239K  vishay
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SI4116DY

New Product Si4110DY Vishay Siliconix N-Channel 80-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.013 at VGS = 10 V 80 17.3 35 nC COMPLIANT 100 % Rg Tested 100 % UIS Tested APPLICATIONS Primary Side Switch Half Bridge SO-8 Intermediate Bus Converter D S 1 ... See More ⇒

 9.2. Size:239K  vishay
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SI4116DY

New Product Si4114DY Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.006 at VGS = 10 V TrenchFET Power MOSFET 20e 20 27.5 nC 100 % Rg and UIS Tested 0.007 at VGS = 4.5 V 20e Compliant to RoHS Directive 2002/95/EC APPLICATIONS Low-Si... See More ⇒

Detailed specifications: SI4090DY , SI4100DY , SI4101DY , SI4102DY , SI4104DY , SI4108DY , SI4110DY , SI4114DY , 7N60 , SI4122DY , SI4124DY , SI4126DY , SI4128DY , SI4134DY , SI4136DY , SI4143DY , SI4154DY .

History: SI4114DY | MCAC80N045Y

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