All MOSFET. SI4136DY Datasheet

 

SI4136DY Datasheet and Replacement


   Type Designator: SI4136DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 31 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 1285 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: SO-8
 

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SI4136DY Datasheet (PDF)

 ..1. Size:237K  vishay
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SI4136DY

New ProductSi4136DYVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.002 at VGS = 10 V 46 100 % Rg and UIS Tested20 34 nC0.0025 at VGS = 4.5 V 41APPLICATIONS OR-ing DC/DCSO-8D SD1 8SD2 7SD3 6GD G 4 5

 9.1. Size:251K  vishay
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SI4136DY

Si4134DYVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition 0.014 at VGS = 10 V 14 TrenchFET Power MOSFET 30 7.3 nC0.0175 at VGS = 4.5 V 12.5 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSSO-8 DC/DC Conversion-

Datasheet: SI4110DY , SI4114DY , SI4116DY , SI4122DY , SI4124DY , SI4126DY , SI4128DY , SI4134DY , 8N60 , SI4143DY , SI4154DY , SI4156DY , SI4160DY , SI4162DY , SI4164DY , SI4166DY , SI4168DY .

History: IXTA200N085T | BSS127

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