SI4178DY Datasheet and Replacement. Cross Reference Search

SI4178DY Datasheet (PDF)

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New ProductSi4178DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.021 at VGS = 10 V 12a TrenchFET Power MOSFET30 3.7 nC0.033 at VGS = 4.5 V 100 % Rg and UIS Tested6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Notebook System

9.1. Size:252K vishay
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New ProductSi4174DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0095 at VGS = 10 V 17 100 % Rg and UIS Tested30 8 nC0.013 at VGS = 4.5 V 14.5APPLICATIONS Notebook CPU Core- High-Side SwitchSO-8 D SD1 8 SD2

9.2. Size:253K vishay
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Si4172DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1530 6.8 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 13Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side

9.3. Size:270K vishay
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New ProductSi4176DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.020 at VGS = 10 V 12a TrenchFET Power MOSFET30 4.7 nC0.027 at VGS = 4.5 V 100 % Rg and UIS Tested10.4 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch