SI4190ADY MOSFET. Datasheet pdf. Equivalent
Type Designator: SI4190ADY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 695 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
Package: SO-8
SI4190ADY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4190ADY Datasheet (PDF)
si4190ady.pdf
New ProductSi4190ADYVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0088 at VGS = 10 V 18.4 Material categorization:For definitions of compliance please see100 0.0094 at VGS = 7.5 V 17.8 20.7 nCwww.vishay.com/doc?999120.0120 at VGS = 4.5 V 1
si4190dy.pdf
New ProductSi4190DYVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0088 at VGS = 10 V 20 TrenchFET Power MOSFET 100 18.3 nC0.012 at VGS = 4.5 V 17 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC Prim
si4196dy.pdf
New ProductSi4196DYVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) 100 % Rg Tested0.027 at VGS = 4.5 V 8 100 % UIS Tested0.032 at VGS = 2.5 V 20 8 8.3 nC Compliant to RoHS Directive 2002/95/EC0.040 at VGS = 1.8 V 8APPLICATIONS DC/DC Converter Load
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: QM3016S | IXFH20N80Q | RU55200Q
History: QM3016S | IXFH20N80Q | RU55200Q
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