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SI4214DDY Spec and Replacement


   Type Designator: SI4214DDY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
   Package: SO-8

 SI4214DDY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4214DDY Specs

 ..1. Size:265K  vishay
 si4214ddy.pdf pdf_icon

SI4214DDY

Si4214DDY Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0195 at VGS = 10 V 8.5 100 % Rg and UIS Tested 30 7.1 0.023 at VGS = 4.5 V 8.6 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Notebook Syst... See More ⇒

 0.1. Size:181K  vishay
 si4214ddy-t1-e3.pdf pdf_icon

SI4214DDY

Si4214DDY-T1-E3 Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 0.0195 at VGS = 10 V 8.5 100 % UIS Tested 30 7.1 Compliant to RoHS Directive 2002/95/EC 0.023 at VGS = 4.5 V 8.6 APPLICATIONS Notebook System Power Low Current DC/DC D D ... See More ⇒

 6.1. Size:243K  vishay
 si4214dd.pdf pdf_icon

SI4214DDY

New Product Si4214DDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0195 at VGS = 10 V 8.5 TrenchFET Power MOSFET 30 7.1 100 % Rg Tested 0.023 at VGS = 4.5 V 8.6 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIO... See More ⇒

 7.1. Size:271K  vishay
 si4214dy.pdf pdf_icon

SI4214DDY

New Product Si4214DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0235 at VGS = 10 V 8.5 TrenchFET Power MOSFET 30 6.7 100 % Rg Tested 0.028 at VGS = 4.5 V 7.8 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATION... See More ⇒

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Detailed specifications: SI4186DY , SI4190ADY , SI4190DY , SI4196DY , SI4200DY , SI4202DY , SI4204DY , SI4210DY , IRF640 , SI4228DY , SI4276DY , SI4286DY , SI4288DY , SI4320DY , SI4322DY , SI4324DY , SI4336DY .

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