SI4320DY Datasheet. Specs and Replacement

Type Designator: SI4320DY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 930 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: SO-8

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SI4320DY datasheet

 ..1. Size:228K  vishay
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SI4320DY

Si4320DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.003 at VGS = 10 V 25 TrenchFET Gen II 30 0.004 at VGS = 4.5 V Ultra Low On-Resistance Using High 22 Density TrenchFET Power MOSFET Technology APPLICATIONS Synchronous Buck Low-Side - Notebook -... See More ⇒

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SI4320DY

Si4322DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0085 at VGS = 10 V TrenchFET Power MOSFET 18 30 11.7 nC 100 % Rg Tested 0.0125 at VGS = 4.5 V 15 APPLICATIONS SCHOTTKY AND BODY DIODE PRODUCT Synchronous Buck-Low S... See More ⇒

 9.2. Size:239K  vishay
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SI4320DY

Si4324DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0032 at VGS = 10 V 36 TrenchFET Power MOSFET 30 25.5 nC 100 % Rg Tested 0.0042 at VGS = 4.5 V 29 APPLICATIONS Synchronous Buck-Low Side - Notebook - Server SO-8 - Workstation D ... See More ⇒

Detailed specifications: SI4202DY, SI4204DY, SI4210DY, SI4214DDY, SI4228DY, SI4276DY, SI4286DY, SI4288DY, IRFP260N, SI4322DY, SI4324DY, SI4336DY, SI4340DDY, SI4346DY, SI4354DY, SI4362BDY, SI4368DY

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