SI4324DY Datasheet. Specs and Replacement
Type Designator: SI4324DY 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 185 nS
Cossⓘ - Output Capacitance: 795 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
Package: SO-8
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SI4324DY substitution
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SI4324DY datasheet
si4324dy.pdf
Si4324DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0032 at VGS = 10 V 36 TrenchFET Power MOSFET 30 25.5 nC 100 % Rg Tested 0.0042 at VGS = 4.5 V 29 APPLICATIONS Synchronous Buck-Low Side - Notebook - Server SO-8 - Workstation D ... See More ⇒
si4322dy.pdf
Si4322DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0085 at VGS = 10 V TrenchFET Power MOSFET 18 30 11.7 nC 100 % Rg Tested 0.0125 at VGS = 4.5 V 15 APPLICATIONS SCHOTTKY AND BODY DIODE PRODUCT Synchronous Buck-Low S... See More ⇒
si4320dy.pdf
Si4320DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.003 at VGS = 10 V 25 TrenchFET Gen II 30 0.004 at VGS = 4.5 V Ultra Low On-Resistance Using High 22 Density TrenchFET Power MOSFET Technology APPLICATIONS Synchronous Buck Low-Side - Notebook -... See More ⇒
Detailed specifications: SI4210DY, SI4214DDY, SI4228DY, SI4276DY, SI4286DY, SI4288DY, SI4320DY, SI4322DY, IRFB4227, SI4336DY, SI4340DDY, SI4346DY, SI4354DY, SI4362BDY, SI4368DY, SI4378DY, SI4384DY
Keywords - SI4324DY MOSFET specs
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