SI4368DY Datasheet. Specs and Replacement

Type Designator: SI4368DY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 850 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: SO-8

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SI4368DY datasheet

 ..1. Size:219K  vishay
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SI4368DY

Si4368DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0032 at VGS = 10 V 25 30 Extremely Low Qgd for Switching 0.0036 at VGS = 4.5 V 22 Losses Improvement TrenchFET Gen II Power MOSFET 100 % Rg Tested Compliant to RoHS Directive ... See More ⇒

 9.1. Size:236K  vishay
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SI4368DY

Si4362BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0046 at VGS = 10 V 19.8 TrenchFET Power MOSFET 30 36 nC 0.0054 at VGS = 4.5 V 18.2 Optimized for "Low Side" Synchronous Rectifier Operation 100 % Rg Tested APPLICATIONS DC/DC ... See More ⇒

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SI4368DY

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 9.3. Size:87K  vishay
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SI4368DY

Si4362DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for Low Side Synchronous PRODUCT SUMMARY Rectifier Operation D 100% Rg Tested VDS (V) rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 APPLICATIONS 30 30 0.0055 @ VGS = 4.5 V 19 D DC/DC Converters D Synchronous Rectifiers SO-8 D SD 1 8 SD 2 7 SD 3 6 GD 4 5 G Top View O... See More ⇒

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Detailed specifications: SI4320DY, SI4322DY, SI4324DY, SI4336DY, SI4340DDY, SI4346DY, SI4354DY, SI4362BDY, P55NF06, SI4378DY, SI4384DY, SI4386DY, SI4390DY, SI4396DY, SI4398DY, SI4401BDY, SI4401DDY

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