SI4368DY - Даташиты. Аналоги. Основные параметры

Si4368DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0032 at VGS = 10 V 25 30 Extremely Low Qgd for Switching 0.0036 at VGS = 4.5 V 22 Losses Improvement TrenchFET Gen II Power MOSFET 100 % Rg Tested Compliant to RoHS Directive

Si4362BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0046 at VGS = 10 V 19.8 TrenchFET Power MOSFET 30 36 nC 0.0054 at VGS = 4.5 V 18.2 Optimized for "Low Side" Synchronous Rectifier Operation 100 % Rg Tested APPLICATIONS DC/DC

Si4362DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for Low Side Synchronous PRODUCT SUMMARY Rectifier Operation D 100% Rg Tested VDS (V) rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 20 APPLICATIONS 30 30 0.0055 @ VGS = 4.5 V 19 D DC/DC Converters D Synchronous Rectifiers SO-8 D SD 1 8 SD 2 7 SD 3 6 GD 4 5 G Top View O