All MOSFET. SI4410DYPBF Datasheet

 

SI4410DYPBF Datasheet and Replacement


   Type Designator: SI4410DYPBF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.7 nS
   Cossⓘ - Output Capacitance: 739 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: SO-8
 

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SI4410DYPBF Datasheet (PDF)

 ..1. Size:119K  vishay
si4410dypbf si4410dytrpbf.pdf pdf_icon

SI4410DYPBF

PD - 95168Si4410DYPbFHEXFET Power MOSFETl N-Channel MOSFETl Low On-ResistanceAl Low Gate Charge A1 8S DVDSS = 30Vl Surface Mount2 7S Dl Logic Level Drive3 6l Lead-Free S D4 5G D RDS(on) = 0.0135DescriptionTop ViewThis N-channel HEXFET Power MOSFET isproduced using International Rectifier's advancedHEXFET power MOSFET technology. The low on-re

 ..2. Size:119K  infineon
si4410dypbf.pdf pdf_icon

SI4410DYPBF

PD - 95168Si4410DYPbFHEXFET Power MOSFETl N-Channel MOSFETl Low On-ResistanceAl Low Gate Charge A1 8S DVDSS = 30Vl Surface Mount2 7S Dl Logic Level Drive3 6l Lead-Free S D4 5G D RDS(on) = 0.0135DescriptionTop ViewThis N-channel HEXFET Power MOSFET isproduced using International Rectifier's advancedHEXFET power MOSFET technology. The low on-re

 6.1. Size:93K  international rectifier
si4410dy.pdf pdf_icon

SI4410DYPBF

PD - 91853CSi4410DYHEXFET Power MOSFET N-Channel MOSFETAA Low On-Resistance 1 8S DVDSS = 30V Low Gate Charge2 7S D Surface Mount3 6S D Logic Level Drive4 5G DRDS(on) = 0.0135Top ViewDescriptionThis N-channel HEXFET Power MOSFET is producedusing International Rectifier's advanced HEXFET powerMOSFET technology. The low on-resistance and low gat

 6.2. Size:353K  vishay
si4410dy.pdf pdf_icon

SI4410DYPBF

SI4410DYN-channel TrenchMOS logic level FETRev. 03 4 December 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features a

Datasheet: SI4401DY , SI4403BDY , SI4403CDY , SI4404DY , SI4406DY , SI4408DY , SI4409DY , SI4410BDY , AON7410 , SI4411DY , SI4412ADY , SI4413ADY , SI4418DY , SI4420BDY , SI4420DYPBF , SI4421DY , SI4423DY .

History: AO4822 | MMBFJ310 | AP99T03GS-HF | AP4P052H | PMDPB65UP | PT530BA | PHB20NQ20T

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