SI4411DY Datasheet and Replacement

Si4411DYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.010 at VGS = - 10 V - 13 TrenchFET Power MOSFET - 300.0155 at VGS = - 4.5 V - 10 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS NotebookSO-8 - Load Switch- Battery SwitchSS1 8 D S D

PD - 91853CSi4410DYHEXFET Power MOSFET N-Channel MOSFETAA Low On-Resistance 1 8S DVDSS = 30V Low Gate Charge2 7S D Surface Mount3 6S D Logic Level Drive4 5G DRDS(on) = 0.0135Top ViewDescriptionThis N-channel HEXFET Power MOSFET is producedusing International Rectifier's advanced HEXFET powerMOSFET technology. The low on-resistance and low gat

Si4413ADYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0075 at VGS = - 10 V - 15 TrenchFET Power MOSFET - 300.011 at VGS = - 4.5 V - 12.3APPLICATIONS Notebook- Load Switch- Battery SwitchSSO-8S 1 8DS 2 7DGS 3 6DG 4 5 DTop View

Si4410BDYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0135 at VGS = 10 V 10 TrenchFET Power MOSFET300.020 at VGS = 4.5 V 8 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Battery Switch Load SwitchSO-8DS D1

PD - 95168Si4410DYPbFHEXFET Power MOSFETl N-Channel MOSFETl Low On-ResistanceAl Low Gate Charge A1 8S DVDSS = 30Vl Surface Mount2 7S Dl Logic Level Drive3 6l Lead-Free S D4 5G D RDS(on) = 0.0135DescriptionTop ViewThis N-channel HEXFET Power MOSFET isproduced using International Rectifier's advancedHEXFET power MOSFET technology. The low on-re

Si4413ADYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.0075 at VGS = - 10 V - 15 TrenchFET Power MOSFET - 300.011 at VGS = - 4.5 V - 12.3APPLICATIONS Notebook- Load Switch- Battery SwitchSSO-8S 1 8DS 2 7DGS 3 6DG 4 5 DTop View

Si4418DYVishay SiliconixN-Channel 200-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.130 at VGS = 10 V 3 TrenchFET Power MOSFET2000.142 at VGS = 6.0 V 2.8 100 % Rg TestedAPPLICATIONS Primary Side SwitchSO-8DS1 8 DS D2 7S3 6 DG D4 5GTop ViewSOrdering

Si4413DYNew ProductVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ()ID (A)Pb-free0.0095 at VGS = - 10 V - 13AvailableAPPLICATIONS- 30RoHS*0.0145 at VGS = - 4.5 V - 10 NotebookCOMPLIANT- Load switch- Battery switchSO-8SS1 8 DS D2 7S3 6 DGG D4 5Top ViewDOrdering

SI4410DYN-channel TrenchMOS logic level FETRev. 03 4 December 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features a

Si4412DYVishay SiliconixN-Channel 30-V (D-S) Rated MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.028 at VGS = 10 V 7.0 TrenchFET Power MOSFET300.042 at VGS = 4.5 V 5.8 Compliant to RoHS Directive 2002/95/ECSO-8 DS D 1 8 S 2 7 D S 3 6 D GG 4 5 D Top View SOrdering

Si4412ADYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.024 at VGS = 10 V 8 TrenchFET Power MOSFETs 300.035 at VGS = 4.5 V 6.6 Compliant to RoHS Directive 2002/95/ECDDSO-8S D1 8S D2 7S D3 6GGG D4 5Top ViewSSOrdering Infor

Si4416DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)0.018 @ VGS = 10 V 9.030300.028 @ VGS = 4.5 V 7.3DSO-8SD1 8S D2 7SD3 6 GG D4 5Top ViewSOrdering Information: Si4416DYN-ChannelSi4416DY-T1 (with Tape and Reel)MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE N

PD - 95168Si4410DYPbFHEXFET Power MOSFETl N-Channel MOSFETl Low On-ResistanceAl Low Gate Charge A1 8S DVDSS = 30Vl Surface Mount2 7S Dl Logic Level Drive3 6l Lead-Free S D4 5G D RDS(on) = 0.0135DescriptionTop ViewThis N-channel HEXFET Power MOSFET isproduced using International Rectifier's advancedHEXFET power MOSFET technology. The low on-re

SMD Type MOSFETN-Channel MOSFETSI4410DY (KI4410DY)SOP-8 Features VDS (V) = 30V ID = 10 A (VGS = 10V) 1.50 0.15 RDS(ON) 13.5m (VGS = 10V) RDS(ON) 20m (VGS = 4.5V)1 Source 5 Drain6 Drain2 Source7 Drain3 Source8 Drain4 GateDGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V

SI4410BDYwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchS

SI4410DY-T1www.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch

SI4416DYwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO