SI4411DY - Даташиты. Аналоги. Основные параметры

Si4411DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.010 at VGS = - 10 V - 13 TrenchFET Power MOSFET - 30 0.0155 at VGS = - 4.5 V - 10 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Notebook SO-8 - Load Switch - Battery Switch S S 1 8 D S D

PD - 91853C Si4410DY HEXFET Power MOSFET N-Channel MOSFET A A Low On-Resistance 1 8 S D VDSS = 30V Low Gate Charge 2 7 S D Surface Mount 3 6 S D Logic Level Drive 4 5 G D RDS(on) = 0.0135 Top View Description This N-channel HEXFET Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gat

Si4413ADY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0075 at VGS = - 10 V - 15 TrenchFET Power MOSFET - 30 0.011 at VGS = - 4.5 V - 12.3 APPLICATIONS Notebook - Load Switch - Battery Switch S SO-8 S 1 8 D S 2 7 D G S 3 6 D G 4 5 D Top View

Si4410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0135 at VGS = 10 V 10 TrenchFET Power MOSFET 30 0.020 at VGS = 4.5 V 8 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Battery Switch Load Switch SO-8 D S D 1

PD - 95168 Si4410DYPbF HEXFET Power MOSFET l N-Channel MOSFET l Low On-Resistance A l Low Gate Charge A 1 8 S D VDSS = 30V l Surface Mount 2 7 S D l Logic Level Drive 3 6 l Lead-Free S D 4 5 G D RDS(on) = 0.0135 Description Top View This N-channel HEXFET Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on- re

Si4413ADY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0075 at VGS = - 10 V - 15 TrenchFET Power MOSFET - 30 0.011 at VGS = - 4.5 V - 12.3 APPLICATIONS Notebook - Load Switch - Battery Switch S SO-8 S 1 8 D S 2 7 D G S 3 6 D G 4 5 D Top View

Si4418DY Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.130 at VGS = 10 V 3 TrenchFET Power MOSFET 200 0.142 at VGS = 6.0 V 2.8 100 % Rg Tested APPLICATIONS Primary Side Switch SO-8 D S 1 8 D S D 2 7 S 3 6 D G D 4 5 G Top View S Ordering

Si4413DY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( )ID (A) Pb-free 0.0095 at VGS = - 10 V - 13 Available APPLICATIONS - 30 RoHS* 0.0145 at VGS = - 4.5 V - 10 Notebook COMPLIANT - Load switch - Battery switch SO-8 S S 1 8 D S D 2 7 S 3 6 D G G D 4 5 Top View D Ordering

SI4410DY N-channel TrenchMOS logic level FET Rev. 03 4 December 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features a

Si4412DY Vishay Siliconix N-Channel 30-V (D-S) Rated MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.028 at VGS = 10 V 7.0 TrenchFET Power MOSFET 30 0.042 at VGS = 4.5 V 5.8 Compliant to RoHS Directive 2002/95/EC SO-8 D S D 1 8 S 2 7 D S 3 6 D G G 4 5 D Top View S Ordering

Si4412ADY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.024 at VGS = 10 V 8 TrenchFET Power MOSFETs 30 0.035 at VGS = 4.5 V 6.6 Compliant to RoHS Directive 2002/95/EC D D SO-8 S D 1 8 S D 2 7 S D 3 6 G G G D 4 5 Top View S S Ordering Infor

Si4416DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 9.0 30 30 0.028 @ VGS = 4.5 V 7.3 D SO-8 SD 1 8 S D 2 7 SD 3 6 G G D 4 5 Top View S Ordering Information Si4416DY N-Channel Si4416DY-T1 (with Tape and Reel) MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE N

PD - 95168 Si4410DYPbF HEXFET Power MOSFET l N-Channel MOSFET l Low On-Resistance A l Low Gate Charge A 1 8 S D VDSS = 30V l Surface Mount 2 7 S D l Logic Level Drive 3 6 l Lead-Free S D 4 5 G D RDS(on) = 0.0135 Description Top View This N-channel HEXFET Power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on- re

SMD Type MOSFET N-Channel MOSFET SI4410DY (KI4410DY) SOP-8 Features VDS (V) = 30V ID = 10 A (VGS = 10V) 1.50 0.15 RDS(ON) 13.5m (VGS = 10V) RDS(ON) 20m (VGS = 4.5V) 1 Source 5 Drain 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate D G S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V

SI4410BDY www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch S

SI4410DY-T1 www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch

SI4416DY www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO