All MOSFET. SI4425BDY Datasheet

 

SI4425BDY MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI4425BDY
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 8.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 64 nC
   trⓘ - Rise Time: 13 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SO-8

 SI4425BDY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4425BDY Datasheet (PDF)

 ..1. Size:227K  vishay
si4425bdy.pdf

SI4425BDY SI4425BDY

Si4425BDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.012 at VGS = - 10 V - 11.4 TrenchFET Power MOSFET- 300.019 at VGS = - 4.5 V - 9.1 Advanced High Cell Density Process Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switches-

 ..2. Size:855K  cn vbsemi
si4425bdy.pdf

SI4425BDY SI4425BDY

SI4425BDYwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PC

 8.1. Size:252K  vishay
si4425dd.pdf

SI4425BDY SI4425BDY

Si4425DDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0098 at VGS = 10 V - 19.7 TrenchFET Power MOSFET- 30 27 nC 100 % Rg Tested0.0165 at VGS = 4.5 V - 15.2APPLICATIONS Load Switches- Notebook PCs- Desktop PCsSO-8SSD1 8SD2

 8.2. Size:95K  vishay
si4425dy.pdf

SI4425BDY SI4425BDY

Si4425DYVishay SiliconixP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)FEATURES0.014 @ VGS = -10 V-11D TrenchFETr Power MOSFET-30-300.023 @ VGS = -4.5 V -8.5 Pb-freeAvailableSO-8SSD1 8S D2 7GSD3 6G D4 5Top ViewDOrdering Information: Si4425DYSi4425DY-T1 (with Tape and Reel)P-Channel MOSFET: Si4425DYE3 (Lead (Pb)-Fr

 8.3. Size:254K  vishay
si4425ddy.pdf

SI4425BDY SI4425BDY

Si4425DDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0098 at VGS = 10 V - 19.7 TrenchFET Power MOSFET- 30 27 nC 100 % Rg Tested0.0165 at VGS = 4.5 V - 15.2APPLICATIONS Load Switches- Notebook PCs- Desktop PCsSO-8SSD1 8SD2

 8.4. Size:826K  cn vbsemi
si4425dy-t1-e3.pdf

SI4425BDY SI4425BDY

SI4425DY-T1-E3www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Deskt

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