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SI4483EDY Spec and Replacement


   Type Designator: SI4483EDY
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: SO-8

 SI4483EDY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4483EDY Specs

 ..1. Size:248K  vishay
 si4483edy.pdf pdf_icon

SI4483EDY

Si4483EDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0085 at VGS = - 10 V - 14 - 30 TrenchFET Power MOSFET 0.014 at VGS = - 4.5 V - 11 ESD Protection 3000 V APPLICATIONS Notebook PC - Load Switch - Adapter Switch S SO-8 S D 1 8 S D 2 7 S D ... See More ⇒

 6.1. Size:245K  vishay
 si4483ed.pdf pdf_icon

SI4483EDY

Si4483EDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0085 at VGS = - 10 V - 14 - 30 TrenchFET Power MOSFET 0.014 at VGS = - 4.5 V - 11 ESD Protection 3000 V APPLICATIONS Notebook PC - Load Switch - Adapter Switch S SO-8 S D 1 8 S D 2 7 S D ... See More ⇒

 8.1. Size:230K  vishay
 si4483ady.pdf pdf_icon

SI4483EDY

Si4483ADY Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.0088 at VGS = - 10 V - 19.2 TrenchFET Power MOSFET - 30 44.8 nC 0.0153 at VGS = - 4.5 V - 14.6 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS ... See More ⇒

 8.2. Size:227K  vishay
 si4483ad.pdf pdf_icon

SI4483EDY

Si4483ADY Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.0088 at VGS = - 10 V - 19.2 TrenchFET Power MOSFET - 30 44.8 nC 0.0153 at VGS = - 4.5 V - 14.6 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS ... See More ⇒

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Detailed specifications: SI4464DY , SI4465ADY , SI4466DY , SI4470EY , SI4472DY , SI4477DY , SI4482DY , SI4483ADY , AO3400A , SI4484EY , SI4485DY , SI4486EY , SI4487DY , SI4488DY , SI4491EDY , SI4493DY , SI4497DY .

Keywords - SI4483EDY MOSFET specs

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