SI4626ADY Datasheet. Specs and Replacement

Type Designator: SI4626ADY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 690 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm

Package: SO-8

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SI4626ADY datasheet

 ..1. Size:240K  vishay
si4626ady.pdf pdf_icon

SI4626ADY

New Product Si4626ADY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0033 at VGS = 10 V 30 TrenchFET Power MOSFET 30 37 nC 100 % Rg and UIS Tested 0.0041 at VGS = 4.5 V 26.3 APPLICATIONS Low-Side DC/DC Conversion - Notebook - Gaming SO-... See More ⇒

 6.1. Size:237K  vishay
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SI4626ADY

New Product Si4626ADY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0033 at VGS = 10 V 30 TrenchFET Power MOSFET 30 37 nC 100 % Rg and UIS Tested 0.0041 at VGS = 4.5 V 26.3 APPLICATIONS Low-Side DC/DC Conversion - Notebook - Gaming SO-... See More ⇒

 8.1. Size:90K  vishay
si4626dy.pdf pdf_icon

SI4626ADY

New Product Si4626DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Qg (Typ) 100 % Rg and UIS Tested RoHS 0.0036 at VGS = 10 V 30 COMPLIANT 34 nC 30 APPLICATIONS 0.0048 at VGS = 4.5 V 26.3 Low-Side DC/DC Conversion - Notebook - Gaming SO-8 D S D 1 8 S D 2 7 S D 3 6 ... See More ⇒

 9.1. Size:255K  vishay
si4628dy.pdf pdf_icon

SI4626ADY

Si4628DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.0030 at VGS = 10 V 38 SkyFET Monolithic TrenchFET Gen III 30 27.5 nC 0.0038 at VGS = 4.5 V 33 Power MOSFET and Schottky Diode 100 % Rg and UIS Tested Compliant to RoHS... See More ⇒

Detailed specifications: SI4554DY, SI4559ADY, SI4564DY, SI4590DY, SI4599DY, SI4618DY, SI4620DY, SI4622DY, IRF730, SI4628DY, SI4630DY, SI4632DY, SI4636DY, SI4638DY, SI4642DY, SI4646DY, SI4654DY

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