Справочник MOSFET. SI4626ADY

 

SI4626ADY MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SI4626ADY
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 21.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 30 nC
   trⓘ - Время нарастания: 21 ns
   Cossⓘ - Выходная емкость: 690 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для SI4626ADY

 

 

SI4626ADY Datasheet (PDF)

 ..1. Size:240K  vishay
 si4626ady.pdf

SI4626ADY SI4626ADY

New ProductSi4626ADYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0033 at VGS = 10 V 30 TrenchFET Power MOSFET 30 37 nC 100 % Rg and UIS Tested0.0041 at VGS = 4.5 V 26.3APPLICATIONS Low-Side DC/DC Conversion- Notebook- GamingSO-

 6.1. Size:237K  vishay
 si4626ad.pdf

SI4626ADY SI4626ADY

New ProductSi4626ADYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0033 at VGS = 10 V 30 TrenchFET Power MOSFET 30 37 nC 100 % Rg and UIS Tested0.0041 at VGS = 4.5 V 26.3APPLICATIONS Low-Side DC/DC Conversion- Notebook- GamingSO-

 8.1. Size:90K  vishay
 si4626dy.pdf

SI4626ADY SI4626ADY

New ProductSi4626DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ()ID (A)a Qg (Typ) 100 % Rg and UIS TestedRoHS 0.0036 at VGS = 10 V 30COMPLIANT 34 nC30APPLICATIONS0.0048 at VGS = 4.5 V 26.3 Low-Side DC/DC Conversion- Notebook- GamingSO-8 DS D 1 8 S D 2 7 S D 3 6

 9.1. Size:255K  vishay
 si4628dy.pdf

SI4626ADY SI4626ADY

Si4628DYVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0030 at VGS = 10 V 38 SkyFET Monolithic TrenchFET Gen III30 27.5 nC0.0038 at VGS = 4.5 V 33Power MOSFET and Schottky Diode 100 % Rg and UIS Tested Compliant to RoHS

 9.2. Size:291K  vishay
 si4622dy.pdf

SI4626ADY SI4626ADY

New ProductSi4622DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0160 at VGS = 10 V 8.0eChannel-1 30 19 SkyFET Monolithic TrenchFET 0.0186 at VGS = 4.5 V 8.0ePower MOSFET and Schottky Diode0.0264 at VGS = 10 V 8.0e

 9.3. Size:281K  vishay
 si4620dy.pdf

SI4626ADY SI4626ADY

Si4620DYVishay SiliconixN-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.035 at VGS = 10 V 7.430 4.2 nC LITTLE FOOT Plus Power MOSFET0.052 at VGS = 4.5 V 6.1 Compliant to RoHS Directive 2002/95/ECSCHOTTKY PRODUCT SUMMARY APPLICATIONS

 9.4. Size:260K  vishay
 si4621dy.pdf

SI4626ADY SI4626ADY

Si4621DYVishay SiliconixP-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.054 at VGS = - 10 V 6.2 LITTLE FOOT Plus Schottky- 20 4.5 nC0.094 at VGS = - 4.5 V 4.7 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSSCHOTTKY PRODUCT SUMMARY P

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