All MOSFET. 2SJ132 Datasheet

 

2SJ132 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SJ132

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 20 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 180 pF

Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm

Package: MP3

2SJ132 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ132 Datasheet (PDF)

1.1. 2sj132-z.pdf Size:369K _upd

2SJ132 2SJ132

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

1.2. 2sj132.pdf Size:132K _nec

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DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ132, 2SJ132-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) Gate drive available at logic level (VGS = -4 V) High current control available in small dimension due to low RDS(on) (? 0.25 ?) 2SJ132-Z is a lead process product and is deal for mounting a hybrid IC. QUALITY GRADES Standard Please refer to

 5.1. 2sj133-z.pdf Size:364K _upd

2SJ132 2SJ132

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.2. 2sj130.pdf Size:86K _renesas

2SJ132 2SJ132

2SJ130(L), 2SJ130(S) Silicon P Channel MOS FET REJ03G0846-0200 (Previous: ADE-208-1181) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators Outline RENESAS Package code: PRSS0004Z

 5.3. 2sj138.pdf Size:154K _nec

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5.4. 2sj135.pdf Size:159K _nec

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 5.5. 2sj133.pdf Size:130K _nec

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DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ133, 2SJ133-Z P-CHANNEL POWER MOS FET FOR SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) Gate drive available at logic level (VGS = 4 V) High current control available in small dimension due to low RDS(on) (? 0.45 ?) 2SJ133-Z is a lead process product and is deal for mounting a hybrid IC. QUALITY GRADES Standard Please refer to

5.6. 2sj134.pdf Size:96K _nec

2SJ132 2SJ132

5.7. 2sj137.pdf Size:100K _no

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5.8. 2sj136.pdf Size:91K _no

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5.9. 2sj139.pdf Size:97K _no

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5.10. 2sj130s.pdf Size:1252K _kexin

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SMD Type MOSFET P-Channel MOSFET 2SJ130S TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ■ Features 4 ● VDS (V) =-300V ● ID =-1 A (VGS =-10V) 0.127 +0.1 0.80-0.1 ● RDS(ON) ＜ 8.5Ω (VGS =-10V) D max ● High speed switching ● Low drive current G + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4.60 -0.15 2 Drain 3 Source 4 Drain S ■ Ab

Datasheet: 2N7272R1 , 2N7272R2 , 2N7272R3 , 2N7272R4 , 2N7275D , 2N7275H , 2N7275R , 2SJ128 , IRF540N , 2SJ133 , 2SJ134 , 2SJ135 , 2SJ136 , 2SJ137 , 2SJ138 , 2SJ139 , 2SJ140 .

 

 
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