All MOSFET. SI4654DY Datasheet

 

SI4654DY MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI4654DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 18.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28.6 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 560 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: SO-8

 SI4654DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4654DY Datasheet (PDF)

 ..1. Size:237K  vishay
 si4654dy.pdf

SI4654DY SI4654DY

Si4654DYVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.004 at VGS = 10 V 28.6 TrenchFET Power MOSFET25 29 nC 100 % Rg Tested0.0052 at VGS = 4.5 V 25.6 100 % UIS TestedAPPLICATIONS Synchronous Buck-Low SideSO-8- Notebook, Game C

 9.1. Size:96K  vishay
 si4652dy.pdf

SI4654DY SI4654DY

Si4652DYVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0035 at VGS = 10 V 30 TrenchFET Power MOSFET 25 35.5 nC0.0042 at VGS = 4.5 V 100 % Rg and UIS Tested28APPLICATIONS Notebook Core VoltageSO-8 DSD1 8 SD2 7 SD3 6 GD

 9.2. Size:288K  vishay
 si4650dy.pdf

SI4654DY SI4654DY

Si4650DYVishay SiliconixDual N-Channel 30-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, e Qg (Typ.)Definition0.018 at VGS = 10 V 8.0Channel-1 30 10.5 TrenchFET Power MOSFET0.022 at VGS = 4.5 V 8.0 100 % Rg and UIS Tested0.018 at VGS = 10 V 8.0Channel-2 30 10.5 Compl

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History: SM6012NSUB | SM4309PSK | IXKH30N60C5

 

 
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