SI4654DY Datasheet. Specs and Replacement

Type Designator: SI4654DY  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V

|Id| ⓘ - Maximum Drain Current: 18.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 560 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: SO-8

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SI4654DY datasheet

 ..1. Size:237K  vishay
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SI4654DY

Si4654DY Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.004 at VGS = 10 V 28.6 TrenchFET Power MOSFET 25 29 nC 100 % Rg Tested 0.0052 at VGS = 4.5 V 25.6 100 % UIS Tested APPLICATIONS Synchronous Buck-Low Side SO-8 - Notebook, Game C... See More ⇒

 9.1. Size:96K  vishay
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SI4654DY

Si4652DY Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0035 at VGS = 10 V 30 TrenchFET Power MOSFET 25 35.5 nC 0.0042 at VGS = 4.5 V 100 % Rg and UIS Tested 28 APPLICATIONS Notebook Core Voltage SO-8 D SD 1 8 SD 2 7 SD 3 6 GD ... See More ⇒

 9.2. Size:288K  vishay
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SI4654DY

Si4650DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) Definition 0.018 at VGS = 10 V 8.0 Channel-1 30 10.5 TrenchFET Power MOSFET 0.022 at VGS = 4.5 V 8.0 100 % Rg and UIS Tested 0.018 at VGS = 10 V 8.0 Channel-2 30 10.5 Compl... See More ⇒

Detailed specifications: SI4626ADY, SI4628DY, SI4630DY, SI4632DY, SI4636DY, SI4638DY, SI4642DY, SI4646DY, 50N06, SI4660DY, SI4666DY, SI4668DY, SI4670DY, SI4682DY, SI4684DY, SI4686DY, SI4688DY

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