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SI4660DY Spec and Replacement


   Type Designator: SI4660DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 17.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: SO-8

 SI4660DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4660DY Specs

 ..1. Size:238K  vishay
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SI4660DY

Si4660DY Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0058 at VGS = 10 V 23.1 TrenchFET Power MOSFET 17 nC 25 100 % Rg and UIS Tested 0.007at VGS = 4.5 V 21 APPLICATIONS DC/DC Conversion - High Side - Low Side SO-8 D SD 1 8 SD ... See More ⇒

 9.1. Size:238K  vishay
 si4668dy.pdf pdf_icon

SI4660DY

Si4668DY Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0105 at VGS = 10 V 16.2 TrenchFET Power MOSFET 25 12.4 nC 100 % Rg and UIS Tested 0.0125 at VGS = 4.5 V 13 APPLICATIONS Synchronous Buck SO-8 - High Side D SD 1 8 SD 2 7 SD 3 ... See More ⇒

 9.2. Size:97K  vishay
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SI4660DY

Si4662DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.010 at VGS = 10 V 18.6 TrenchFET Power MOSFET 11 nC 30 100 % Rg and UIS Tested 0.014 at VGS = 4.5 V 15.7 APPLICATIONS High-Side Switch - Notebook DC/DC - Server DC/DC SO-8 D SD 1 ... See More ⇒

 9.3. Size:259K  vishay
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SI4660DY

Si4666DY Vishay Siliconix N-Channel 25 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.010 at VGS = 10 V 16.5 TrenchFET Power MOSFET 0.011 at VGS = 4.5 V 25 15.8 10.7 nC 100 % Rg and UIS Tested 0.014 at VGS = 2.5 V 14 Compliant to RoHS Directive 2002/95/EC APPLICATION... See More ⇒

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Detailed specifications: SI4628DY , SI4630DY , SI4632DY , SI4636DY , SI4638DY , SI4642DY , SI4646DY , SI4654DY , IRFP460 , SI4666DY , SI4668DY , SI4670DY , SI4682DY , SI4684DY , SI4686DY , SI4688DY , SI4712DY .

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