All MOSFET. SI4776DY Datasheet

 

SI4776DY Datasheet and Replacement


   Type Designator: SI4776DY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 141 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: SO-8
 
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SI4776DY Datasheet (PDF)

 ..1. Size:271K  vishay
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SI4776DY

New ProductSi4776DYVishay SiliconixN-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.)Definition SkyFETMonolithic TrenchFETPower 0.016 at VGS = 10 V 11.930 5.5 nCMOSFET and Schottky Diode0.020 at VGS = 4.5 V 10.6 100 % Rg and UIS Teste

 9.1. Size:270K  vishay
si4774dy.pdf pdf_icon

SI4776DY

New ProductSi4774DYVishay SiliconixN-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0095 at VGS = 10 V SkyFET Monolithic TrenchFET Gen. 1630 9.5 nCPower MOSFET and Schottky Diode0.0120 at VGS = 4.5 V 15 100 % Rg Tested

 9.2. Size:241K  vishay
si4778dy.pdf pdf_icon

SI4776DY

Si4778DYVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Qg (Typ.)ID (A)Available0.023 at VGS = 10 V 8a TrenchFET Power MOSFET25 5.5 nC 100 % Rg and UIS Tested0.028 at VGS = 4.5 V 8aAPPLICATIONS DC/DC Converter Gaming Notebook System PowerSO-8 DS 1

Datasheet: SI4670DY , SI4682DY , SI4684DY , SI4686DY , SI4688DY , SI4712DY , SI4752DY , SI4774DY , IRFB4227 , SI4778DY , SI4800 , SI4800BDY , SI4810BDY , SI4812BDY , SI4816BDY , SI4823DY , SI4825DDY .

History: BSS123N3

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