SI4778DY Datasheet and Replacement
Type Designator: SI4778DY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: SO-8
SI4778DY substitution
SI4778DY Datasheet (PDF)
si4778dy.pdf

Si4778DYVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Qg (Typ.)ID (A)Available0.023 at VGS = 10 V 8a TrenchFET Power MOSFET25 5.5 nC 100 % Rg and UIS Tested0.028 at VGS = 4.5 V 8aAPPLICATIONS DC/DC Converter Gaming Notebook System PowerSO-8 DS 1
si4776dy.pdf

New ProductSi4776DYVishay SiliconixN-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.)Definition SkyFETMonolithic TrenchFETPower 0.016 at VGS = 10 V 11.930 5.5 nCMOSFET and Schottky Diode0.020 at VGS = 4.5 V 10.6 100 % Rg and UIS Teste
si4774dy.pdf

New ProductSi4774DYVishay SiliconixN-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0095 at VGS = 10 V SkyFET Monolithic TrenchFET Gen. 1630 9.5 nCPower MOSFET and Schottky Diode0.0120 at VGS = 4.5 V 15 100 % Rg Tested
Datasheet: SI4682DY , SI4684DY , SI4686DY , SI4688DY , SI4712DY , SI4752DY , SI4774DY , SI4776DY , IRFB4110 , SI4800 , SI4800BDY , SI4810BDY , SI4812BDY , SI4816BDY , SI4823DY , SI4825DDY , SI4825DY .
History: TPCA8028-H | KI2300 | APTC60DAM18CTG | ELM56801EA | DMP6110SSD | EM6K7 | HUFA75829D3S
Keywords - SI4778DY MOSFET datasheet
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History: TPCA8028-H | KI2300 | APTC60DAM18CTG | ELM56801EA | DMP6110SSD | EM6K7 | HUFA75829D3S



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