SI4800 Datasheet. Specs and Replacement
Type Designator: SI4800 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0185 Ohm
Package: SO-8
📄📄 Copy
SI4800 substitution
- MOSFET ⓘ Cross-Reference Search
SI4800 datasheet
si4800.pdf
SI4800 N-channel TrenchMOS logic level FET M3D315 Rev. 02 17 February 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features Low gate charge Surface mounted package Low on-state resistance Fast switching. 1.3 Applications Portable appliances Notebook computers ... See More ⇒
si4800bdy.pdf
Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0185 at VGS = 10 V 9 30 TrenchFET Power MOSFET 0.030 at VGS = 4.5 V 7 High-Efficient PWM Optimized 100 % UIS and Rg Tested SO-8 D S 1 8 D S D 2 7 S 3 6 D G D 4 5 G Top Vi... See More ⇒
si4800bd.pdf
Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0185 at VGS = 10 V 9 30 TrenchFET Power MOSFET 0.030 at VGS = 4.5 V 7 High-Efficient PWM Optimized 100 % UIS and Rg Tested SO-8 D S 1 8 D S D 2 7 S 3 6 D G D 4 5 G Top Vi... See More ⇒
si4800dy.pdf
Si4800DY Vishay Siliconix N-Channel Reducded Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 30 30 0.033 @ VGS = 4.5 V 7 D D D D SO-8 SD 1 8 S D 2 7 G SD 3 6 G D N-Channel MOSFET 4 5 Top View Ordering Information Si4800DY Si4800DY-T1 (with Tape and Reel) S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Paramet... See More ⇒
Detailed specifications: SI4684DY, SI4686DY, SI4688DY, SI4712DY, SI4752DY, SI4774DY, SI4776DY, SI4778DY, IRFB4115, SI4800BDY, SI4810BDY, SI4812BDY, SI4816BDY, SI4823DY, SI4825DDY, SI4825DY, SI4829DY
Keywords - SI4800 MOSFET specs
SI4800 cross reference
SI4800 equivalent finder
SI4800 pdf lookup
SI4800 substitution
SI4800 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
