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SI4833ADY Spec and Replacement


   Type Designator: SI4833ADY
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.072 Ohm
   Package: SO-8

 SI4833ADY Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI4833ADY Specs

 ..1. Size:45K  vishay
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SI4833ADY

Specification Comparison Vishay Siliconix Si4833ADY vs. Si4833DY Description P-Channel, 30 V (D-S) MOSFET with Schottky Diode Package SO-8 Pin Out Identical Part Number Replacements Si4833ADY-T1-E3 Replaces Si4833DY-T1-E3 Si4833ADY-T1-E3 Replaces Si4833DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symbol Si4833ADY Si4833DY Unit Drain-Source Voltage... See More ⇒

 6.1. Size:238K  vishay
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SI4833ADY

Si4833ADY Vishay Siliconix P-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.072 at VGS = - 10 V - 4.6 LITTLE FOOT Plus Power MOSFET - 30 - 4.6 0.110 at VGS = - 4.5 V - 3.4 Compliant to RoHS Directive 2002/95/EC SCHOTTKY PRODUCT SUMMARY VF ... See More ⇒

 8.1. Size:97K  vishay
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SI4833ADY

Si4833DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.085 @ VGS = 10 V "3.5 30 30 0.180 @ VGS = 4.5 V "2.5 SCHOTTKY PRODUCT SUMMARY VF (V) VKA (V) Diode Forward Voltage IF (A) 30 0.5 V @ 1.0 A 1.4 S K SO-8 K A 1 8 G K A 2 7 SD 3 6 GD 4 5 D A Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C... See More ⇒

 8.2. Size:268K  vishay
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SI4833ADY

Si4833BDY Vishay Siliconix P-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition LITTLE FOOT Plus Power MOSFET 0.068 at VGS = - 10 V - 4.6 - 30 4.6 100 % Rg Tested 0.110 at VGS = - 4.5 V - 3.4 Compliant to RoHS Directive 2002/95/EC SCHOTTKY ... See More ⇒

Detailed specifications: SI4812BDY , SI4816BDY , SI4823DY , SI4825DDY , SI4825DY , SI4829DY , SI4830CDY , SI4831BDY , 2N7002 , SI4833BDY , SI4835DDY , SI4836DY , SI4838BDY , SI4838DY , SI4840BDY , SI4840DY , SI4842BDY .

History: QS8K21 | BL3N100E-U | BL3N100E-A | IXFP12N50PM

Keywords - SI4833ADY MOSFET specs

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