SI5402BDC MOSFET. Datasheet pdf. Equivalent

   Type Designator: SI5402BDC
   Marking Code: AD*
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 4.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 10 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: 1206-8

SI5402BDC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SI5402BDC Datasheet (PDF)

..1. Size:226K vishay
si5402bdc.pdf

Si5402BDCVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.035 at VGS = 10 V 6.730 TrenchFET Power MOSFET0.042 at VGS = 4.5 V 6.11206-8 ChipFETD1DD DD DD GGMarking CodeSAD XXXLot Traceabilityand Date CodePart # CodeBottom ViewSOrder

8.1. Size:227K vishay
si5402dc.pdf

Si5402DCVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.035 at VGS = 10 V 6.7 TrenchFET Power MOSFETs300.055 at VGS = 4.5 V 5.3 Compliant to RoHS Directive 2002/95/EC1206-8 ChipFETD1 D D D D D Marking Code AA XX D G GLot Traceabil

9.1. Size:246K vishay
si5406cdc.pdf

New ProductSi5406CDCVishay SiliconixN-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.020 at VGS = 4.5 V 6RoHS0.023 at VGS = 2.5 V 12 6 11.5 nCCOMPLIANTAPPLICATIONS0.027 at VGS = 1.8 V 6 Load/Power Switching for Cell Phones and Pagers PA Switch in Cellular Devices

9.2. Size:201K vishay
si5406dc.pdf

Si5406DCVishay SiliconixN-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.020 at VGS = 4.5 V 9.5 TrenchFET Power MOSFETs: 2.5 V Rated120.025 at VGS = 2.5 V 8.5 Low Thermal ResistanceAPPLICATIONS Load/Power Switching for Cell Phones and Pagers1206-8 ChipFET

9.3. Size:215K vishay
si5403dc.pdf

New ProductSi5403DCVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = - 10 V 6a- 30 2 nC 100 % Rg Tested RoHS0.044 at VGS = - 4.5 V 6aCOMPLIANTAPPLICATIONS DC/DC Converter- Load Switch1206-8 ChipFET- Adaptor Switch1SDD DD D

9.4. Size:227K vishay
si5401dc.pdf

Si5401DCVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.032 at VGS = - 4.5 V - 7.1 TrenchFET Power MOSFET0.040 at VGS = - 2.5 V - 6.4 16.5- 20 Ultra-Low On-Resistance0.053 at VGS = - 1.8 V - 5.5 Thermally Enhanced ChipFET Package 40 %

9.5. Size:222K vishay
si5404bdc.pdf

Si5404BDCVishay SiliconixN-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.028 at VGS = 4.5 V 7.520 6.3 TrenchFET Power MOSFET0.039 at VGS = 2.5 V 6.31206-8 ChipFET1DDD DD DD GMarking CodeSGAE XXXLot Traceabilityand Date CodePart # CodeBotto

9.6. Size:72K vishay
si5404dc.pdf

Si5404DCVishay SiliconixN-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.030 @ VGS = 4.5 V 7.220200.045 @ VGS = 2.5 V 5.9D1206-8 ChipFETr1DD DD DGD GMarking CodeSAB XXLot Traceabilityand Date CodeSPart # CodeBottom ViewN-Channel MOSFETOrdering Information: Si5404DC-T1ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE

9.7. Size:242K vishay
si5406cd.pdf

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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SI5402BDC MOSFET. Datasheet pdf. Equivalent

SI5402BDC Datasheet (PDF)

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