SI5404BDC
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI5404BDC
Marking Code: AE*
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 5.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7.5
nC
trⓘ - Rise Time: 12
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028
Ohm
Package: 1206-8
SI5404BDC
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI5404BDC
Datasheet (PDF)
..1. Size:222K vishay
si5404bdc.pdf 
Si5404BDCVishay SiliconixN-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.028 at VGS = 4.5 V 7.520 6.3 TrenchFET Power MOSFET0.039 at VGS = 2.5 V 6.31206-8 ChipFET1DDD DD DD GMarking CodeSGAE XXXLot Traceabilityand Date CodePart # CodeBotto
8.1. Size:72K vishay
si5404dc.pdf
Si5404DCVishay SiliconixN-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.030 @ VGS = 4.5 V 7.220200.045 @ VGS = 2.5 V 5.9D1206-8 ChipFETr1DD DD DGD GMarking CodeSAB XXLot Traceabilityand Date CodeSPart # CodeBottom ViewN-Channel MOSFETOrdering Information: Si5404DC-T1ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE
9.1. Size:246K vishay
si5406cdc.pdf
New ProductSi5406CDCVishay SiliconixN-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.020 at VGS = 4.5 V 6RoHS0.023 at VGS = 2.5 V 12 6 11.5 nCCOMPLIANTAPPLICATIONS0.027 at VGS = 1.8 V 6 Load/Power Switching for Cell Phones and Pagers PA Switch in Cellular Devices
9.2. Size:201K vishay
si5406dc.pdf
Si5406DCVishay SiliconixN-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.020 at VGS = 4.5 V 9.5 TrenchFET Power MOSFETs: 2.5 V Rated120.025 at VGS = 2.5 V 8.5 Low Thermal ResistanceAPPLICATIONS Load/Power Switching for Cell Phones and Pagers1206-8 ChipFET
9.3. Size:227K vishay
si5402dc.pdf
Si5402DCVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.035 at VGS = 10 V 6.7 TrenchFET Power MOSFETs300.055 at VGS = 4.5 V 5.3 Compliant to RoHS Directive 2002/95/EC1206-8 ChipFETD1 D D D D D Marking Code AA XX D G GLot Traceabil
9.4. Size:215K vishay
si5403dc.pdf
New ProductSi5403DCVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = - 10 V 6a- 30 2 nC 100 % Rg Tested RoHS0.044 at VGS = - 4.5 V 6aCOMPLIANTAPPLICATIONS DC/DC Converter- Load Switch1206-8 ChipFET- Adaptor Switch1SDD DD D
9.5. Size:227K vishay
si5401dc.pdf
Si5401DCVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.032 at VGS = - 4.5 V - 7.1 TrenchFET Power MOSFET0.040 at VGS = - 2.5 V - 6.4 16.5- 20 Ultra-Low On-Resistance0.053 at VGS = - 1.8 V - 5.5 Thermally Enhanced ChipFET Package 40 %
9.6. Size:242K vishay
si5406cd.pdf
New ProductSi5406CDCVishay SiliconixN-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.020 at VGS = 4.5 V 6RoHS0.023 at VGS = 2.5 V 12 6 11.5 nCCOMPLIANTAPPLICATIONS0.027 at VGS = 1.8 V 6 Load/Power Switching for Cell Phones and Pagers PA Switch in Cellular Devices
9.7. Size:226K vishay
si5402bdc.pdf
Si5402BDCVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.035 at VGS = 10 V 6.730 TrenchFET Power MOSFET0.042 at VGS = 4.5 V 6.11206-8 ChipFETD1DD DD DD GGMarking CodeSAD XXXLot Traceabilityand Date CodePart # CodeBottom ViewSOrder
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