SI5445BDC MOSFET. Datasheet pdf. Equivalent
Type Designator: SI5445BDC
Marking Code: BM*
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 5.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7.1 nC
trⓘ - Rise Time: 22 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: 1206-8
SI5445BDC Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI5445BDC Datasheet (PDF)
si5445bdc.pdf
Si5445BDCVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.033 at VGS = - 4.5 V - 7.1 TrenchFET Power MOSFET0.043 at VGS = - 2.5 V - 6.2 14- 80.060 at VGS = - 1.8 V - 5.31206-8 ChipFET1DSD DD DMarking CodeD GGBM XXSLot Traceability
si5445dc.pdf
Si5445DCVishay SiliconixP-Channel 1.8-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) () ID (A)0.035 @ VGS = --4.5 V7.1--8 0.047 @ VGS = --2.5 V 6.20.062 @ VGS = --1.8 V 5.7S1206-8 ChipFETt1DGD DD DMarking CodeD GBC XXSLot Traceabilityand Date CodePart # CodeDBottom ViewP-Channel MOSFETOrdering Information: Si5445DC-T1ABSOLUTE MAXIM
si5443dc.pdf
Si5443DCVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.065 at VGS = - 4.5 V 4.9 TrenchFET Power MOSFETs: 2.5 V Rated0.074 at VGS = - 3.6 V - 20 4.60.110 at VGS = - 2.5 V 3.81206 -8 ChipFET S1 D D D D D GMarking CodeD G BB XX Lot
si5441dc.pdf
Si5441DCVishay SiliconixP-Channel 2.5 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.055 at VGS = - 4.5 V - 5.3 TrenchFET Power MOSFET0.06 at VGS = - 3.6 V - 5.1 11 2.5 V Rated- 20 Compliant to RoHS Directive 2002/95/EC0.083 at VGS = - 2.5 V - 4.31206-8 ChipFET1
si5441bdc.pdf
Si5441BDCVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.045 at VGS = - 4.5 V - 6.1 TrenchFET Power MOSFET0.052 at VGS = - 3.6 V - 5.7 11.5- 200.080 at VGS = - 2.5 V - 4.61206-8 ChipFET1DSD DD DMarking CodeD GGBK XXSLot Traceabil
si5449dc.pdf
Si5449DCVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.085 at VGS = - 4.5 V - 4.3 TrenchFET Power MOSFETs: 2.5 V Rated- 300.135 at VGS = - 2.5 V - 3.41206-8 ChipFETS1 D D D D D GMarking CodeD G BH XX Lot Traceability S and Date Code
si5440dc.pdf
New ProductSi5440DCVishay Siliconix N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.019 at VGS = 10 V 630 9 nCAPPLICATIONS0.024 at VGS = 4.5 V 6 Load Switches- Notebook PC1206-8 ChipFET1DDD DD DD GGSSBottom ViewN-Channel
si5442du.pdf
Si5442DUVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) Thermally Enhanced PowerPAKChipFET Package0.0100 at VGS = 4.5 V 25- Small Footprint Area- Low On-Resistance0.0115 at VGS = 2.5 V 2520 16.6 nC- Thin 0.8 mm Profile0.0135 at VGS = 1.8 V 25 100% Rg Tested
si5447dc.pdf
Si5447DCVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Available0.076 at VGS = - 4.5 V - 4.8 TrenchFET Power MOSFETs: 1.8 V Rated0.110 at VGS = - 2.5 V - 20 - 4.00.160 at VGS = - 1.8 V - 3.31206-8 ChipFETS1DD DD DGMarking CodeD GBG XXSLot Traceab
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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