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SI5853 Spec and Replacement


   Type Designator: SI5853
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: DFN3X2-8L

 SI5853 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI5853 Specs

 ..1. Size:254K  vishay
 si5853.pdf pdf_icon

SI5853

Shen zhen TuoFeng Semiconductor Techonlogy co., LTD SI5853 P-Channel Enhancement Mode MOSFET with Schottky Diode FEATURE APPLICATIONS MOSFET Battery Powered System -20V/-3.5A, RDS(ON) 110m @VGS = -4.5V Notebook Power Management -20V/-2.4A, RDS(ON) 160m @VGS = -2.5V Cell Phone SCHOTTKY VKA = 20V, VF=0.4V(Typ.)@ IF = 0.5A Full RoHS compliance ... See More ⇒

 0.1. Size:172K  vishay
 si5853dc.pdf pdf_icon

SI5853

Si5853DC Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.110 at VGS = - 4.5 V - 3.6 LITTLE FOOT Plus 0.160 at VGS = - 2.5 V - 20 - 3.0 Compliant to RoHS Directive 2002/95/EC 0.240 at VGS = - 1.8 V - 2.4 SCHOTTKY PRODUCT SUMMARY ... See More ⇒

 0.2. Size:130K  vishay
 si5853cdc.pdf pdf_icon

SI5853

Si5853CDC Vishay Siliconix P-Channel 20 V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.104 at VGS = - 4.5 V - 4a LITTLE FOOT Plus Schottky Power MOSFET - 20 0.144 at VGS = - 2.5 V - 3.6 4.2 nC Compliant to RoHS Directive 2002/95/EC 0.205 at VGS = - 1.8 V... See More ⇒

 0.3. Size:190K  vishay
 si5853ddc.pdf pdf_icon

SI5853

Si5853DDC Vishay Siliconix P-Channel 20 V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.105 at VGS = - 4.5 V - 4a LITTLE FOOT Plus Schottky Power MOSFET - 20 0.143 at VGS = - 2.5 V - 3.8 4.7 nC Compliant to RoHS Directive 2002/95/EC 0.188 at VGS = - 1.8 V... See More ⇒

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Detailed specifications: SI5484DU , SI5485DU , SI5486DU , SI5499DC , SI5504BDC , SI5513CDC , SI5515CDC , SI5517DU , IRFB4115 , SI5853CDC , SI5853DDC , SI5855CDC , SI5857DU , SI5858DU , SI5902BDC , SI5904DC , SI5906DU .

History: IXFN40N110P | IXFN44N50Q | IXFN44N100Q3

Keywords - SI5853 MOSFET specs

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