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SI5935CDC Spec and Replacement


   Type Designator: SI5935CDC
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: 1206-8

 SI5935CDC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI5935CDC Specs

 ..1. Size:239K  vishay
 si5935cdc.pdf pdf_icon

SI5935CDC

Si5935CDC Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.100 at VGS = - 4.5 V TrenchFET Power MOSFETs - 4g 100 % Rg Tested - 20 0.120 at VGS = - 2.5 V - 4g 6.2 nC Compliant to RoHS Directive 2002/95/EC 0.156 at VGS = - 1.8 V - 3.8 APP... See More ⇒

 6.1. Size:235K  vishay
 si5935cd.pdf pdf_icon

SI5935CDC

Si5935CDC Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.100 at VGS = - 4.5 V TrenchFET Power MOSFETs - 4g 100 % Rg Tested - 20 0.120 at VGS = - 2.5 V - 4g 6.2 nC Compliant to RoHS Directive 2002/95/EC 0.156 at VGS = - 1.8 V - 3.8 APP... See More ⇒

 9.1. Size:238K  vishay
 si5933cd.pdf pdf_icon

SI5935CDC

Si5933CDC Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.144 at VGS = - 4.5 V - 3.7 TrenchFET Power MOSFET 0.180 at VGS = - 2.5 V - 3.0 4.1 nC - 20 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC 0.222 at VGS = - 1.8 V - 3.0 APPLICATI... See More ⇒

 9.2. Size:130K  vishay
 si5938du.pdf pdf_icon

SI5935CDC

Si5938DU Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.039 at VGS = 4.5 V 6 New Thermally Enhanced PowerPAK RoHS 0.045 at VGS = 2.5 V 20 6 6 nC ChipFET Package COMPLIANT - Small Footprint Area 0.055 at VGS = 1.8 V 6 - Low On-Resistance PowerPAK C... See More ⇒

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Detailed specifications: SI5857DU , SI5858DU , SI5902BDC , SI5904DC , SI5906DU , SI5908DC , SI5913DC , SI5933CDC , IRF9540N , SI5936DU , SI5944DU , SI5980DU , SI5997DU , SI5999EDU , SI6404DQ , SI6410DQ , SI6413DQ .

Keywords - SI5935CDC MOSFET specs

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