All MOSFET. SI5935CDC Datasheet

 

SI5935CDC MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI5935CDC
   Marking Code: DK*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 3.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: 1206-8

 SI5935CDC Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI5935CDC Datasheet (PDF)

 ..1. Size:239K  vishay
 si5935cdc.pdf

SI5935CDC SI5935CDC

Si5935CDCVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.100 at VGS = - 4.5 V TrenchFET Power MOSFETs- 4g 100 % Rg Tested- 20 0.120 at VGS = - 2.5 V - 4g 6.2 nC Compliant to RoHS Directive 2002/95/EC0.156 at VGS = - 1.8 V - 3.8APP

 6.1. Size:235K  vishay
 si5935cd.pdf

SI5935CDC SI5935CDC

Si5935CDCVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.100 at VGS = - 4.5 V TrenchFET Power MOSFETs- 4g 100 % Rg Tested- 20 0.120 at VGS = - 2.5 V - 4g 6.2 nC Compliant to RoHS Directive 2002/95/EC0.156 at VGS = - 1.8 V - 3.8APP

 9.1. Size:238K  vishay
 si5933cd.pdf

SI5935CDC SI5935CDC

Si5933CDCVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.144 at VGS = - 4.5 V - 3.7 TrenchFET Power MOSFET0.180 at VGS = - 2.5 V - 3.0 4.1 nC- 20 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC0.222 at VGS = - 1.8 V - 3.0APPLICATI

 9.2. Size:130K  vishay
 si5938du.pdf

SI5935CDC SI5935CDC

Si5938DUVishay SiliconixDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.039 at VGS = 4.5 V 6 New Thermally Enhanced PowerPAKRoHS0.045 at VGS = 2.5 V 20 6 6 nC ChipFET PackageCOMPLIANT- Small Footprint Area0.055 at VGS = 1.8 V 6- Low On-ResistancePowerPAK C

 9.3. Size:242K  vishay
 si5933cdc.pdf

SI5935CDC SI5935CDC

Si5933CDCVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.144 at VGS = - 4.5 V - 3.7 TrenchFET Power MOSFET0.180 at VGS = - 2.5 V - 3.0 4.1 nC- 20 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC0.222 at VGS = - 1.8 V - 3.0APPLICATI

 9.4. Size:151K  vishay
 si5936du.pdf

SI5935CDC SI5935CDC

New Product Si5936DUVishay SiliconixDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) Thermally Enhanced PowerPAKChipFET Package0.030 at VGS = 10 V 6- Small Footprint Area30 3.5 nC- Low On-Resistance0.040 at VGS = 4.5 V 6- Thin 0.8 mm Profile 100 % Rg Tested Mater

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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