SI5997DU Datasheet and Replacement
Type Designator: SI5997DU
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.054 Ohm
Package: POWERPAK
SI5997DU substitution
SI5997DU Datasheet (PDF)
si5997du.pdf
Si5997DUVishay SiliconixDual P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.054 at VGS = - 10 V - 6a TrenchFET Power MOSFET- 30 4.8 nC New Thermally Enhanced PowerPAK0.088 at VGS = - 4.5 V - 6aChipFET Package- Small Footprint Area- Low On-Resistance-
si5999ed.pdf
Si5999EDUVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.059 at VGS = - 4.5 V - 6a TrenchFET Power MOSFET- 20 6.9 nC New Thermally Enhanced PowerPAK0.096 at VGS = - 2.5 V - 6aChipFET Package- Small Footprint Area- Low On-Resistance
si5999edu.pdf
Si5999EDUVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.059 at VGS = - 4.5 V - 6a TrenchFET Power MOSFET- 20 6.9 nC New Thermally Enhanced PowerPAK0.096 at VGS = - 2.5 V - 6aChipFET Package- Small Footprint Area- Low On-Resistance
Datasheet: SI5906DU , SI5908DC , SI5913DC , SI5933CDC , SI5935CDC , SI5936DU , SI5944DU , SI5980DU , SPP20N60C3 , SI5999EDU , SI6404DQ , SI6410DQ , SI6413DQ , SI6415DQ , SI6423DQ , SI6433BDQ , SI6435ADQ .
History: SSP3N90 | SSF7NS70UGX | IPI65R380C6 | IRFB23N15DPBF | KMB6D6N30Q | NP16N06YLL | WSD60N10GDN56
Keywords - SI5997DU MOSFET datasheet
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History: SSP3N90 | SSF7NS70UGX | IPI65R380C6 | IRFB23N15DPBF | KMB6D6N30Q | NP16N06YLL | WSD60N10GDN56
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