SI6410DQ
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI6410DQ
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 7.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 22
nC
trⓘ - Rise Time: 10
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014
Ohm
Package:
TSSOP-8
SI6410DQ
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI6410DQ
Datasheet (PDF)
..1. Size:194K vishay
si6410dq.pdf 
Si6410DQVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFETs0.014 at VGS = 10 V 7.830RoHS0.021 at VGS = 4.5 V 6.3COMPLIANTDTSSOP-8* Source Pins 2, 3, 6 and 7 must be tied common.GD D1 8S S2 7Si6410DQS S3 6G D4 5Top View S*Ordering Information:
9.1. Size:196K vishay
si6415dq.pdf
Si6415DQVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs 0.019 at VGS = - 10 V 6.5Available- 300.030 at VGS = - 4.5 V 5.2RoHS*COMPLIANTS*TSSOP-8G* Source Pins 2, 3, 6 and 7 D D1 8must be tied common.S S2 7Si6415DQS S3 6G D4 5Top V
9.2. Size:201K vishay
si6413dq.pdf
Si6413DQVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFET 0.010 at VGS = - 4.5 V - 8.8RoHS0.013 at VGS = - 2.5 V - 20 - 7.6COMPLIANTAPPLICATIONS0.016 at VGS = - 1.8 V - 6.8 Load Switch PA Switch Charger SwitchS*TSSOP-8G* Source Pins 2, 3, 6 and 7
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