SI6443DQ Spec and Replacement
Type Designator: SI6443DQ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.05 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 21 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TSSOP-8
SI6443DQ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI6443DQ Specs
si6443dq.pdf
Si6443DQ Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFET 0.012 at VGS = - 10 V - 8.8 - 30 RoHS 0.019 at VGS = - 4.5 V - 7.0 COMPLIANT APPLICATIONS Battery Switch Load Switch S* TSSOP-8 G * Source Pins 2, 3, 6 and 7 must be tied common. D D 1 8 S S 2 7 Si6443D... See More ⇒
si6441dq.pdf
Si6441DQ Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFET 0.015 at VGS = - 10 V - 8 - 30 RoHS 0.024 at VGS = - 4.5 V - 6.4 COMPLIANT APPLICATIONS Battery Switch Load Switch S* TSSOP-8 G * Source Pins 2, 3, 6 and 7 must be tied common. D D 1 8 S S 2 7 Si6441DQ ... See More ⇒
si6447dq.pdf
Si6447DQ Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.09 @ VGS = 10 V "3.2 20 20 0.16 @ VGS = 4.5 V "2.4 S* TSSOP-8 G D D 1 8 D * Source Pins 2, 3, 6 and 7 S S must be tied common. 2 7 Si6447DQ S S 3 6 G D 4 5 Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symb... See More ⇒
Detailed specifications: SI5999EDU , SI6404DQ , SI6410DQ , SI6413DQ , SI6415DQ , SI6423DQ , SI6433BDQ , SI6435ADQ , 5N65 , SI6459BDQ , SI6463BDQ , SI6465DQ , SI6466ADQ , SI6467BDQ , SI6469DQ , SI6473DQ , SI6544BDQ .
Keywords - SI6443DQ MOSFET specs
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