SI6443DQ Datasheet. Specs and Replacement

Type Designator: SI6443DQ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.05 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TSSOP-8

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SI6443DQ datasheet

 ..1. Size:74K  vishay
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SI6443DQ

Si6443DQ Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFET 0.012 at VGS = - 10 V - 8.8 - 30 RoHS 0.019 at VGS = - 4.5 V - 7.0 COMPLIANT APPLICATIONS Battery Switch Load Switch S* TSSOP-8 G * Source Pins 2, 3, 6 and 7 must be tied common. D D 1 8 S S 2 7 Si6443D... See More ⇒

 9.1. Size:82K  vishay
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SI6443DQ

Si6441DQ Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFET 0.015 at VGS = - 10 V - 8 - 30 RoHS 0.024 at VGS = - 4.5 V - 6.4 COMPLIANT APPLICATIONS Battery Switch Load Switch S* TSSOP-8 G * Source Pins 2, 3, 6 and 7 must be tied common. D D 1 8 S S 2 7 Si6441DQ ... See More ⇒

 9.2. Size:66K  vishay
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SI6443DQ

Si6447DQ Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.09 @ VGS = 10 V "3.2 20 20 0.16 @ VGS = 4.5 V "2.4 S* TSSOP-8 G D D 1 8 D * Source Pins 2, 3, 6 and 7 S S must be tied common. 2 7 Si6447DQ S S 3 6 G D 4 5 Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symb... See More ⇒

Detailed specifications: SI5999EDU, SI6404DQ, SI6410DQ, SI6413DQ, SI6415DQ, SI6423DQ, SI6433BDQ, SI6435ADQ, 5N65, SI6459BDQ, SI6463BDQ, SI6465DQ, SI6466ADQ, SI6467BDQ, SI6469DQ, SI6473DQ, SI6544BDQ

Keywords - SI6443DQ MOSFET specs

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