SI6562CDQ Datasheet and Replacement
Type Designator: SI6562CDQ
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
Package: TSSOP-8
SI6562CDQ substitution
SI6562CDQ Datasheet (PDF)
si6562cdq.pdf

New ProductSi6562CDQVishay SiliconixN- and P-Channel 20-V (D-S) MOSFETsFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () ID (A) Qg (Typ.) TrenchFET Power MOSFETs0.022 at VGS = 4.5 V 6.7aN-Channel 20 6.7 nCRoHS0.036 at VGS = 2.5 V 5.2aCOMPLIANTAPPLICATIONS0.030 at VGS = - 4.5 V - 6.1a Load SwitchP-Channel - 20 17 nC0.045 at VGS = -
si6562cd.pdf

New ProductSi6562CDQVishay SiliconixN- and P-Channel 20-V (D-S) MOSFETsFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () ID (A) Qg (Typ.) TrenchFET Power MOSFETs0.022 at VGS = 4.5 V 6.7aN-Channel 20 6.7 nCRoHS0.036 at VGS = 2.5 V 5.2aCOMPLIANTAPPLICATIONS0.030 at VGS = - 4.5 V - 6.1a Load SwitchP-Channel - 20 17 nC0.045 at VGS = -
si6562dq.pdf

Si6562DQVishay SiliconixN- and P-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETS: 2.5 V Rated0.030 at VGS = 4.5 V 4.5AvailableN-Channel 200.040 at VGS = 2.5 V 3.9RoHS*COMPLIANT0.050 at VGS = - 4.5 V 3.5P-Channel - 200.085 at VGS = - 2.5 V 2.7
Datasheet: SI6459BDQ , SI6463BDQ , SI6465DQ , SI6466ADQ , SI6467BDQ , SI6469DQ , SI6473DQ , SI6544BDQ , IRF1407 , SI6913DQ , SI6925ADQ , SI6926ADQ , SI6928DQ , SI6943BDQ , SI6954ADQ , SI6963BDQ , SI6968BEDQ .
History: SFG110N12PF | IPI65R380C6 | SSF7NS70UGX | IRLZ44SPBF | NP16N06YLL | KMB6D6N30Q | KML0D4N20V
Keywords - SI6562CDQ MOSFET datasheet
SI6562CDQ cross reference
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History: SFG110N12PF | IPI65R380C6 | SSF7NS70UGX | IRLZ44SPBF | NP16N06YLL | KMB6D6N30Q | KML0D4N20V



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