SI6562CDQ Datasheet. Specs and Replacement

Type Designator: SI6562CDQ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TSSOP-8

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SI6562CDQ datasheet

 ..1. Size:245K  vishay
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SI6562CDQ

New Product Si6562CDQ Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFETs FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) TrenchFET Power MOSFETs 0.022 at VGS = 4.5 V 6.7a N-Channel 20 6.7 nC RoHS 0.036 at VGS = 2.5 V 5.2a COMPLIANT APPLICATIONS 0.030 at VGS = - 4.5 V - 6.1a Load Switch P-Channel - 20 17 nC 0.045 at VGS = - ... See More ⇒

 6.1. Size:241K  vishay
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SI6562CDQ

New Product Si6562CDQ Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFETs FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) TrenchFET Power MOSFETs 0.022 at VGS = 4.5 V 6.7a N-Channel 20 6.7 nC RoHS 0.036 at VGS = 2.5 V 5.2a COMPLIANT APPLICATIONS 0.030 at VGS = - 4.5 V - 6.1a Load Switch P-Channel - 20 17 nC 0.045 at VGS = - ... See More ⇒

 8.1. Size:232K  vishay
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SI6562CDQ

Si6562DQ Vishay Siliconix N- and P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETS 2.5 V Rated 0.030 at VGS = 4.5 V 4.5 Available N-Channel 20 0.040 at VGS = 2.5 V 3.9 RoHS* COMPLIANT 0.050 at VGS = - 4.5 V 3.5 P-Channel - 20 0.085 at VGS = - 2.5 V 2.7 ... See More ⇒

Detailed specifications: SI6459BDQ, SI6463BDQ, SI6465DQ, SI6466ADQ, SI6467BDQ, SI6469DQ, SI6473DQ, SI6544BDQ, IRFP450, SI6913DQ, SI6925ADQ, SI6926ADQ, SI6928DQ, SI6943BDQ, SI6954ADQ, SI6963BDQ, SI6968BEDQ

Keywords - SI6562CDQ MOSFET specs

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