SI7123DN Datasheet: MOSFET, P-Ch, 20V, 10.2A. Full specification with pinout and replacement list

SI7123DN Datasheet. Specs and Replacement

Type Designator: SI7123DN 📄📄

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 10.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 88 nS

Cossⓘ - Output Capacitance: 542 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0106 Ohm

Package: POWERPAK-1212-8

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SI7123DN datasheet

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New Product Si7123DN Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0106 at VGS = - 4.5 V - 16.0 TrenchFET Power MOSFET 1.8 V Rated - 20 0.0136 at VGS = - 2.5 V - 14.1 Ultra Low On-Resistance for Increased Battery Life 0.0189 at VGS = - 1.8 V - 12.0 New ... See More ⇒

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New Product Si7121DN Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = - 10 V - 16d 100% Rg Tested RoHS - 30 22 nC COMPLIANT 100% UIS Tested 0.0305 at VGS = - 4.5 V - 16d APPLICATIONS PowerPAK 1212-8 Notebook Battery Charging S Noteb... See More ⇒

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Si7120DN Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFET 0.019 at VGS = 10 V RoHS 10 60 COMPLIANT New Low Thermal Resistance 0.028 at VGS = 4.5 V 8.2 PowerPAK 1212-8 Package with Low 1.07 mm Profile 100 % Rg Tested APPLICATIONS PowerPAK 1212-8 ... See More ⇒

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