All MOSFET. SI7137DP Datasheet

 

SI7137DP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI7137DP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 6.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 42 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 390 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 2150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00195 Ohm
   Package: POWERPAK-SO-8

 SI7137DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI7137DP Datasheet (PDF)

 ..1. Size:339K  vishay
si7137dp.pdf

SI7137DP SI7137DP

New ProductSi7137DPVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition 0.00195 at VGS = - 10 V- 60d TrenchFET Gen III P-Channel Power MOSFET- 20 0.0025 at VGS = - 4.5 V- 60d 183 nC 100 % Rg Tested0.0039 at VGS = - 2.5 V - 60d 100 % UIS Tested

 9.1. Size:482K  vishay
si7138dp.pdf

SI7137DP SI7137DP

Si7138DPVishay SiliconixN-Channel 60 V (D-S) Reduced Qgd, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0078 at VGS = 10 V 30 Low Thermal Resistance PowerPAK Package60 550.009 at VGS = 6 V 30 100 % Rg and Avalanche Tested Compliant to RoHS Directive 2002/95/

 9.2. Size:482K  vishay
si7136dp.pdf

SI7137DP SI7137DP

Si7136DPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0032 at VGS = 10 V 30 Ultra-Low On-Resistance Using High20 24.5Density TrenchFET Gen II Power0.0045 at VGS = 4.5 V 30MOSFET TechnologyPowerPAK SO-8 Qg Optimized 100 % Rg Tested

 9.3. Size:318K  vishay
si7139dp.pdf

SI7137DP SI7137DP

New ProductSi7139DPVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.0055 at VGS = - 10 V - 40d TrenchFET Power MOSFET- 30 49.5 nC 100% Rg Tested0.0090 at VGS = - 4.5 V - 40d 100% UIS TestedPowerPAK SO-8 Compliant to RoHS Directive 2002/

 9.4. Size:480K  vishay
si7135dp.pdf

SI7137DP SI7137DP

New ProductSi7135DPVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS 0.0039 at VGS = - 10 V - 60COMPLIANT - 30 78 nC 100 % Rg Tested0.0062 at VGS = - 4.5 V - 60APPLICATIONSPowerPAK SO-8 Notebook- Load SwitchSS6.15 mm 5.15 mm1S2

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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