SI7138DP
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI7138DP
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 5.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 19.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 30
nC
trⓘ - Rise Time: 120
nS
Cossⓘ -
Output Capacitance: 470
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0078
Ohm
Package:
POWERPAK-SO-8
SI7138DP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI7138DP
Datasheet (PDF)
..1. Size:482K vishay
si7138dp.pdf
Si7138DPVishay SiliconixN-Channel 60 V (D-S) Reduced Qgd, Fast Switching MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0078 at VGS = 10 V 30 Low Thermal Resistance PowerPAK Package60 550.009 at VGS = 6 V 30 100 % Rg and Avalanche Tested Compliant to RoHS Directive 2002/95/
9.1. Size:339K vishay
si7137dp.pdf
New ProductSi7137DPVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition 0.00195 at VGS = - 10 V- 60d TrenchFET Gen III P-Channel Power MOSFET- 20 0.0025 at VGS = - 4.5 V- 60d 183 nC 100 % Rg Tested0.0039 at VGS = - 2.5 V - 60d 100 % UIS Tested
9.2. Size:482K vishay
si7136dp.pdf
Si7136DPVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0032 at VGS = 10 V 30 Ultra-Low On-Resistance Using High20 24.5Density TrenchFET Gen II Power0.0045 at VGS = 4.5 V 30MOSFET TechnologyPowerPAK SO-8 Qg Optimized 100 % Rg Tested
9.3. Size:318K vishay
si7139dp.pdf
New ProductSi7139DPVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.0055 at VGS = - 10 V - 40d TrenchFET Power MOSFET- 30 49.5 nC 100% Rg Tested0.0090 at VGS = - 4.5 V - 40d 100% UIS TestedPowerPAK SO-8 Compliant to RoHS Directive 2002/
9.4. Size:480K vishay
si7135dp.pdf
New ProductSi7135DPVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS 0.0039 at VGS = - 10 V - 60COMPLIANT - 30 78 nC 100 % Rg Tested0.0062 at VGS = - 4.5 V - 60APPLICATIONSPowerPAK SO-8 Notebook- Load SwitchSS6.15 mm 5.15 mm1S2
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