SI7143DP Spec and Replacement
Type Designator: SI7143DP
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 4.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 385 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: POWERPAK-SO-8
SI7143DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI7143DP Specs
si7145dp.pdf
New Product Si7145DP Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.0026 at VGS = - 10 V - 60d TrenchFET Power MOSFET - 30 129 nC 100 % Rg Tested 0.00375 at VGS = - 4.5 V - 60d 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPA... See More ⇒
si7149adp.pdf
Si7149ADP Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Low On-Resistance for Low Voltage Drop Extended VGS max. Rating 25 V 0.0052 at VGS = - 10 V - 50d - 30 43.1 nC 100 % Rg and UIS Tested 0.0095 at VGS = - 4.5 V - 50d Material categorization For definitions of... See More ⇒
si7141dp.pdf
New Product Si7141DP Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.0019 at VGS = - 10 V - 60d TrenchFET Power MOSFET - 20 128 nC 100 % Rg Tested 0.0030 at VGS = - 4.5 V - 60d 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK... See More ⇒
Detailed specifications: SI7121DN , SI7123DN , SI7135DP , SI7136DP , SI7137DP , SI7138DP , SI7139DP , SI7141DP , RU7088R , SI7145DP , SI7148DP , SI7149ADP , SI7149DP , SI7156DP , SI7157DP , SI7159DP , SI7160DP .
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