SI7143DP Datasheet. Specs and Replacement

Type Designator: SI7143DP  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 43 nS

Cossⓘ - Output Capacitance: 385 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: POWERPAK-SO-8

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SI7143DP datasheet

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SI7143DP

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SI7143DP

New Product Si7145DP Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.0026 at VGS = - 10 V - 60d TrenchFET Power MOSFET - 30 129 nC 100 % Rg Tested 0.00375 at VGS = - 4.5 V - 60d 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPA... See More ⇒

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SI7143DP

Si7149ADP Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Low On-Resistance for Low Voltage Drop Extended VGS max. Rating 25 V 0.0052 at VGS = - 10 V - 50d - 30 43.1 nC 100 % Rg and UIS Tested 0.0095 at VGS = - 4.5 V - 50d Material categorization For definitions of... See More ⇒

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SI7143DP

New Product Si7141DP Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.0019 at VGS = - 10 V - 60d TrenchFET Power MOSFET - 20 128 nC 100 % Rg Tested 0.0030 at VGS = - 4.5 V - 60d 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK... See More ⇒

Detailed specifications: SI7121DN, SI7123DN, SI7135DP, SI7136DP, SI7137DP, SI7138DP, SI7139DP, SI7141DP, RU7088R, SI7145DP, SI7148DP, SI7149ADP, SI7149DP, SI7156DP, SI7157DP, SI7159DP, SI7160DP

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