IRFS340A Datasheet and Replacement
Type Designator: IRFS340A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 175 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
Package: TO3PF
IRFS340A substitution
IRFS340A Datasheet (PDF)
irfs340a.pdf

IRFS340AFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current: 10A (Max.) @ VDS = 400V Lower RDS(ON): 0.437 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Character
irfs340b.pdf

November 2001IRFS340B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8A, 400V, RDS(on) = 0.54 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to Fast sw
Datasheet: IRFS252 , IRFS253 , IRFS254A , IRFS330 , IRFS331 , IRFS332 , IRFS333 , IRFS340 , IRF3205 , IRFS341 , IRFS342 , IRFS343 , IRFS350 , IRFS350A , IRFS351 , IRFS352 , IRFS353 .
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