All MOSFET. IRFS342 Datasheet

 

IRFS342 Datasheet and Replacement


   Type Designator: IRFS342
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO3P
 

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IRFS342 Datasheet (PDF)

 8.1. Size:185K  1
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IRFS342

 8.2. Size:676K  1
 irfs340b.pdf pdf_icon

IRFS342

November 2001IRFS340B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8A, 400V, RDS(on) = 0.54 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to Fast sw

 8.3. Size:226K  1
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IRFS342

IRFS340AFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current: 10A (Max.) @ VDS = 400V Lower RDS(ON): 0.437 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Character

 8.4. Size:282K  1
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IRFS342

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Datasheet: IRFS254A , IRFS330 , IRFS331 , IRFS332 , IRFS333 , IRFS340 , IRFS340A , IRFS341 , 20N60 , IRFS343 , IRFS350 , IRFS350A , IRFS351 , IRFS352 , IRFS353 , IRFS430 , IRFS431 .

Keywords - IRFS342 MOSFET datasheet

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