All MOSFET. SI7358ADP Datasheet

 

SI7358ADP Datasheet and Replacement


   Type Designator: SI7358ADP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 880 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: POWERPAK-SO-8
 

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SI7358ADP Datasheet (PDF)

 ..1. Size:462K  vishay
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SI7358ADP

Si7358ADPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFETRoHS 0.0042 at VGS = 10 V 23 Optimized for Low Side Synchronous COMPLIANT 30 30.50.0059 at VGS = 4.5 V 20 Rectifier Operation New Low Thermal Resistance PowerPAK Package withLow 1.07

 9.1. Size:467K  vishay
 si7356adp.pdf pdf_icon

SI7358ADP

Si7356ADPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A)a Qg (Typ.) Ultra-Low On-Resistance Using High Density RoHS0.003 at VGS = 10 V 40TrenchFET Gen II COMPLIANT30 46 nC0.004 at VGS = 4.5 V 40 New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile 100 % Rg T

 9.2. Size:465K  vishay
 si7356ad.pdf pdf_icon

SI7358ADP

Si7356ADPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A)a Qg (Typ.) Ultra-Low On-Resistance Using High Density RoHS0.003 at VGS = 10 V 40TrenchFET Gen II COMPLIANT30 46 nC0.004 at VGS = 4.5 V 40 New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile 100 % Rg T

Datasheet: SI7317DN , SI7322DN , SI7326DN , SI7328DN , SI7336ADP , SI7342DP , SI7344DP , SI7356ADP , SPP20N60C3 , SI7366DP , SI7368DP , SI7370ADP , SI7370DP , SI7374DP , SI7380ADP , SI7382DP , SI7384DP .

History: NCEP072N10A | SIZ704DT

Keywords - SI7358ADP MOSFET datasheet

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