SI7358ADP Datasheet and Replacement
Type Designator: SI7358ADP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 880 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: POWERPAK-SO-8
- MOSFET Cross-Reference Search
SI7358ADP Datasheet (PDF)
si7358adp.pdf
Si7358ADPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFETRoHS 0.0042 at VGS = 10 V 23 Optimized for Low Side Synchronous COMPLIANT 30 30.50.0059 at VGS = 4.5 V 20 Rectifier Operation New Low Thermal Resistance PowerPAK Package withLow 1.07
si7356adp.pdf
Si7356ADPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A)a Qg (Typ.) Ultra-Low On-Resistance Using High Density RoHS0.003 at VGS = 10 V 40TrenchFET Gen II COMPLIANT30 46 nC0.004 at VGS = 4.5 V 40 New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile 100 % Rg T
si7356ad.pdf
Si7356ADPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A)a Qg (Typ.) Ultra-Low On-Resistance Using High Density RoHS0.003 at VGS = 10 V 40TrenchFET Gen II COMPLIANT30 46 nC0.004 at VGS = 4.5 V 40 New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile 100 % Rg T
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: NTTFS024N06C | SRT10N160LD | NCE30P12BS | APT10021JFLL | NP180N04TUJ | SSW65R190S2 | SM4186T9RL
Keywords - SI7358ADP MOSFET datasheet
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History: NTTFS024N06C | SRT10N160LD | NCE30P12BS | APT10021JFLL | NP180N04TUJ | SSW65R190S2 | SM4186T9RL
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