SI7358ADP Specs and Replacement
Type Designator: SI7358ADP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 880 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
Package: POWERPAK-SO-8
SI7358ADP substitution
SI7358ADP Specs
si7358adp.pdf
Si7358ADP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free available VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET RoHS 0.0042 at VGS = 10 V 23 Optimized for Low Side Synchronous COMPLIANT 30 30.5 0.0059 at VGS = 4.5 V 20 Rectifier Operation New Low Thermal Resistance PowerPAK Package with Low 1.07... See More ⇒
si7356adp.pdf
Si7356ADP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free available VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Ultra-Low On-Resistance Using High Density RoHS 0.003 at VGS = 10 V 40 TrenchFET Gen II COMPLIANT 30 46 nC 0.004 at VGS = 4.5 V 40 New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile 100 % Rg T... See More ⇒
si7356ad.pdf
Si7356ADP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free available VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Ultra-Low On-Resistance Using High Density RoHS 0.003 at VGS = 10 V 40 TrenchFET Gen II COMPLIANT 30 46 nC 0.004 at VGS = 4.5 V 40 New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile 100 % Rg T... See More ⇒
Detailed specifications: SI7317DN , SI7322DN , SI7326DN , SI7328DN , SI7336ADP , SI7342DP , SI7344DP , SI7356ADP , K3569 , SI7366DP , SI7368DP , SI7370ADP , SI7370DP , SI7374DP , SI7380ADP , SI7382DP , SI7384DP .
Keywords - SI7358ADP MOSFET specs
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