IRFS343 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFS343
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
|Id|ⓘ - Maximum Drain Current: 5.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO3P
IRFS343 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFS343 Datasheet (PDF)
irfs340b.pdf
November 2001IRFS340B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8A, 400V, RDS(on) = 0.54 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to Fast sw
irfs340a.pdf
IRFS340AFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current: 10A (Max.) @ VDS = 400V Lower RDS(ON): 0.437 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Character
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRFS350A
History: IRFS350A
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918