All MOSFET. IRFS343 Datasheet

 

IRFS343 Datasheet and Replacement


   Type Designator: IRFS343
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 350 V
   |Id|ⓘ - Maximum Drain Current: 5.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO3P
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IRFS343 Datasheet (PDF)

 8.1. Size:185K  1
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IRFS343

 8.2. Size:676K  1
 irfs340b.pdf pdf_icon

IRFS343

November 2001IRFS340B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8A, 400V, RDS(on) = 0.54 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 41 nC)planar, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tailored to Fast sw

 8.3. Size:226K  1
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IRFS343

IRFS340AFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.55 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current: 10A (Max.) @ VDS = 400V Lower RDS(ON): 0.437 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Character

 8.4. Size:282K  1
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IRFS343

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History: AP9565AGJ-HF | HLML6401 | FQPF7N65C | NTMS5P02R2SG | AP88N30W | FQB11N40CTM | AP85T03GH-HF

Keywords - IRFS343 MOSFET datasheet

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