SI7455DP Datasheet and Replacement
Type Designator: SI7455DP
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 5.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 10.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 320 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: POWERPAK-SO-8
SI7455DP Datasheet (PDF)
si7455dp.pdf

Si7455DPVishay SiliconixP-Channel 80-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.025 at VGS = - 10 V - 28 TrenchFET Power MOSFET- 80 65 nC0.029 at VGS = - 6 V - 28PowerPAK SO-8SS6.15 mm 5.15 mm1S2GS3G4D8D7D6DD5Bottom View P-Channel MOS
si7456cdp.pdf

New ProductSi7456CDPVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0235 at VGS = 10 V 27.5 TrenchFET Power MOSFET 100 % Rg Tested0.0245 at VGS = 7.5 V 100 27 7.7 nC 100 % UIS Tested0.0315 at VGS = 4.5 V 24 Compliant to RoHS D
si7456dp.pdf

Si7456DPVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.025 at VGS = 10 V 9.3 TrenchFET Power MOSFETs1000.028 at VGS = 6.0 V New Low Thermal Resistance PowerPAK8.8Package with Low 1.07 mm Profile PWM Optimized for Fast Switching 100 % Rg Test
si7457dp.pdf

Si7457DPVishay SiliconixP-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.042 at VGS = - 10 V - 28 TrenchFET Power MOSFET- 100 67 nC0.045 at VGS = - 6 V - 28PowerPAK SO-8SS6.15 mm 5.15 mm1S2S3G4GD8D7D6D5Bottom ViewDOrdering I
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