SI7476DP Datasheet. Specs and Replacement

Type Designator: SI7476DP  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm

Package: POWERPAK-SO-8

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SI7476DP datasheet

 ..1. Size:463K  vishay
 si7476dp.pdf pdf_icon

SI7476DP

Si7476DP Vishay Siliconix N-Channel 40-V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0053 at VGS = 10 V 25 TrenchFET Power MOSFET 40 0.0066 at VGS = 4.5 V 23 New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile PowerPAK SO-8 D S 6.15 mm 5.15 mm 1 S ... See More ⇒

 9.1. Size:465K  vishay
 si7478dp.pdf pdf_icon

SI7476DP

Si7478DP Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.0075 at VGS = 10 V 20 TrenchFET Power MOSFET 60 0.0088 at VGS = 4.5 V New Low Thermal Resistance PowerPAK 18.5 Package with Low 1.07 mm Profile 100 % Rg Tested PowerPAK SO-8 S 6.15 mm 5.15 mm ... See More ⇒

 9.2. Size:1024K  cn vbsemi
 si7478dp-t1.pdf pdf_icon

SI7476DP

SI7478DP-T1 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.006 at VGS = 10 V 80 Material categorization 60 0.007 at VGS = 4.5 V 65 D DFN5X6 Top View Top View Bottom View 1 8 2 7 G 3 6 4 5 PIN1 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 2... See More ⇒

Detailed specifications: SI7460DP, SI7461DP, SI7462DP, SI7463ADP, SI7463DP, SI7464DP, SI7465DP, SI7469DP, AO4407, SI7478DP, SI7483ADP, SI7485DP, SI7489DP, SI7491DP, SI7495DP, SI7540ADP, SI7540DP

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