SI7682DP PDF Specs and Replacement
Type Designator: SI7682DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 82 nS
Cossⓘ - Output Capacitance: 375 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: POWERPAK-SO-8
SI7682DP substitution
SI7682DP PDF Specs
si7682dp.pdf
Si7682DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0090 at VGS = 10 V 20 TrenchFET Power MOSFET 30 11 nC 0.0130 at VGS = 4.5 V 20 100 % Rg Tested APPLICATIONS PowerPAK SO-8 High-Side DC/DC Conversion - Notebook - Server S 6.15 mm 5... See More ⇒
si7684dp.pdf
Si7684DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0090 at VGS = 10 V 20 TrenchFET Power MOSFET 30 11 nC 0.011 at VGS = 4.5 V 20 100 % Rg Tested PowerPAK SO-8 APPLICATIONS High-Side DC/DC Conversion S - Notebook 6.15 mm 5.15 mm D ... See More ⇒
si7686dp.pdf
Si7686DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free available VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.0095 at VGS = 10 V 35 New Low Thermal Resistance PowerPAK COMPLIANT 30 9.2 nC Package with Low 1.07 mm Profile 0.014 at VGS = 4.5 V 35 Optimized for High-Side Synchronous Rectifier O... See More ⇒
Detailed specifications: SI7635DP , SI7636DP , SI7655ADN , SI7655DN , SI7658ADP , SI7664DP , SI7668ADP , SI7674DP , 2N7000 , SI7686DP , SI7703EDN , SI7716ADN , SI7718DN , SI7720DN , SI7726DN , SI7738DP , SI7742DP .
Keywords - SI7682DP MOSFET specs
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