SI7682DP Datasheet. Specs and Replacement

Type Designator: SI7682DP  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 82 nS

Cossⓘ - Output Capacitance: 375 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: POWERPAK-SO-8

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SI7682DP datasheet

 ..1. Size:471K  vishay
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SI7682DP

Si7682DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0090 at VGS = 10 V 20 TrenchFET Power MOSFET 30 11 nC 0.0130 at VGS = 4.5 V 20 100 % Rg Tested APPLICATIONS PowerPAK SO-8 High-Side DC/DC Conversion - Notebook - Server S 6.15 mm 5... See More ⇒

 9.1. Size:91K  vishay
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SI7682DP

Si7684DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.0090 at VGS = 10 V 20 TrenchFET Power MOSFET 30 11 nC 0.011 at VGS = 4.5 V 20 100 % Rg Tested PowerPAK SO-8 APPLICATIONS High-Side DC/DC Conversion S - Notebook 6.15 mm 5.15 mm D ... See More ⇒

 9.2. Size:466K  vishay
 si7686dp.pdf pdf_icon

SI7682DP

Si7686DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free available VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET RoHS 0.0095 at VGS = 10 V 35 New Low Thermal Resistance PowerPAK COMPLIANT 30 9.2 nC Package with Low 1.07 mm Profile 0.014 at VGS = 4.5 V 35 Optimized for High-Side Synchronous Rectifier O... See More ⇒

Detailed specifications: SI7635DP, SI7636DP, SI7655ADN, SI7655DN, SI7658ADP, SI7664DP, SI7668ADP, SI7674DP, IRFB4227, SI7686DP, SI7703EDN, SI7716ADN, SI7718DN, SI7720DN, SI7726DN, SI7738DP, SI7742DP

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