All MOSFET. SI7682DP Datasheet

 

SI7682DP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SI7682DP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 17.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 82 nS
   Cossⓘ - Output Capacitance: 375 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: POWERPAK-SO-8

 SI7682DP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI7682DP Datasheet (PDF)

 ..1. Size:471K  vishay
si7682dp.pdf

SI7682DP
SI7682DP

Si7682DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0090 at VGS = 10 V 20 TrenchFET Power MOSFET30 11 nC0.0130 at VGS = 4.5 V 20 100 % Rg TestedAPPLICATIONSPowerPAK SO-8 High-Side DC/DC Conversion- Notebook- ServerS6.15 mm 5

 9.1. Size:91K  vishay
si7684dp.pdf

SI7682DP
SI7682DP

Si7684DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0090 at VGS = 10 V 20 TrenchFET Power MOSFET30 11 nC0.011 at VGS = 4.5 V 20 100 % Rg TestedPowerPAK SO-8APPLICATIONS High-Side DC/DC ConversionS - Notebook6.15 mm 5.15 mmD

 9.2. Size:466K  vishay
si7686dp.pdf

SI7682DP
SI7682DP

Si7686DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS0.0095 at VGS = 10 V 35 New Low Thermal Resistance PowerPAK COMPLIANT30 9.2 nCPackage with Low 1.07 mm Profile0.014 at VGS = 4.5 V 35 Optimized for High-Side Synchronous RectifierO

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