SI7682DP Datasheet and Replacement
Type Designator: SI7682DP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 82 nS
Cossⓘ - Output Capacitance: 375 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: POWERPAK-SO-8
SI7682DP substitution
SI7682DP Datasheet (PDF)
si7682dp.pdf

Si7682DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0090 at VGS = 10 V 20 TrenchFET Power MOSFET30 11 nC0.0130 at VGS = 4.5 V 20 100 % Rg TestedAPPLICATIONSPowerPAK SO-8 High-Side DC/DC Conversion- Notebook- ServerS6.15 mm 5
si7684dp.pdf

Si7684DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0090 at VGS = 10 V 20 TrenchFET Power MOSFET30 11 nC0.011 at VGS = 4.5 V 20 100 % Rg TestedPowerPAK SO-8APPLICATIONS High-Side DC/DC ConversionS - Notebook6.15 mm 5.15 mmD
si7686dp.pdf

Si7686DPVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free availableVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS0.0095 at VGS = 10 V 35 New Low Thermal Resistance PowerPAK COMPLIANT30 9.2 nCPackage with Low 1.07 mm Profile0.014 at VGS = 4.5 V 35 Optimized for High-Side Synchronous RectifierO
Datasheet: SI7635DP , SI7636DP , SI7655ADN , SI7655DN , SI7658ADP , SI7664DP , SI7668ADP , SI7674DP , IRF9540 , SI7686DP , SI7703EDN , SI7716ADN , SI7718DN , SI7720DN , SI7726DN , SI7738DP , SI7742DP .
History: NVMFD020N06C | AFP8452 | IPD90N04S3-H4
Keywords - SI7682DP MOSFET datasheet
SI7682DP cross reference
SI7682DP equivalent finder
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History: NVMFD020N06C | AFP8452 | IPD90N04S3-H4



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