SI7790DP Specs and Replacement

Type Designator: SI7790DP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 25.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 475 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: POWERPAK-SO-8

SI7790DP substitution

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SI7790DP datasheet

 ..1. Size:509K  vishay
 si7790dp.pdf pdf_icon

SI7790DP

New Product Si7790DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET RoHS 0.0045 at VGS = 10 V 50 100 % Rg and UIS Tested COMPLIANT 40 29 nC 0.006 at VGS = 4.5 V 50 APPLICATIONS PowerPAK SO-8 DC/DC Converter D S 6.15 mm 5.15 mm 1 S 2 ... See More ⇒

 9.1. Size:182K  vishay
 si7792dp.pdf pdf_icon

SI7790DP

New Product Si7792DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition SkyFET Monolithic TrenchFET Gen III 0.0021 at VGS = 10 V 60 30 41 nC Power MOSFET and Schottky Diode 0.0026 at VGS = 4.5 V 60 100 % Rg Tested 100 % Av... See More ⇒

 9.2. Size:183K  vishay
 si7794dp.pdf pdf_icon

SI7790DP

New Product Si7794DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0034 at VGS = 10 V SkyFET Monolithic TrenchFET Gen III 60 30 23 nC Power MOSFET and Schottky Diode 0.0042 at VGS = 4.5 V 60 100 % Rg Tested 100 % Aval... See More ⇒

Detailed specifications: SI7738DP, SI7742DP, SI7748DP, SI7758DP, SI7772DP, SI7774DP, SI7784DP, SI7788DP, K3569, SI7792DP, SI7794DP, SI7802DN, SI7804DN, SI7806ADN, SI7810DN, SI7812DN, SI7818DN

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