All MOSFET. SI7810DN Datasheet

 

SI7810DN Datasheet and Replacement


   Type Designator: SI7810DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.062 Ohm
   Package: POWERPAK-1212-8
 

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SI7810DN Datasheet (PDF)

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SI7810DN

Si7810DNVishay SiliconixN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) TrenchFET Power MOSFET 0.062 at VGS = 10 V 5.4 New Low Thermal ResistanceRoHS100COMPLIANT0.084 at VGS = 6 V PowerPAK 1212-8 Package with Low 4.61.07 mm Profile PWM OptimizedAPPLICATIONS Primary Side

 9.1. Size:533K  vishay
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SI7810DN

Si7818DNVishay SiliconixN-Channel 150-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.135 at VGS = 10 V 3.4 PWM-Optimized TrenchFET Power MOSFET150 20 nC0.142 at VGS = 6 V 3.3 100 % Rg Tested Avalanche TestedAPPLICATIONSPowerPAK 1212-8 Primary Side Switching

 9.2. Size:549K  vishay
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SI7810DN

Si7812DNVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Available0.037 at VGS = 10 V 16e TrenchFET Power MOSFET75 8 nC0.046 at VGS = 4.5 V 16e Low Thermal Resistance PowerPAK Package with Small Size and Low 1.07 mmProfilePowerPAK 1212-8APPLICATIONS

Datasheet: SI7784DP , SI7788DP , SI7790DP , SI7792DP , SI7794DP , SI7802DN , SI7804DN , SI7806ADN , TK10A60D , SI7812DN , SI7818DN , SI7820DN , SI7840BDP , SI7846DP , SI7848BDP , SI7848DP , SI7850DP .

History: RFP5P12 | IRF820ASPBF | IRFY430CM

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