SI7812DN Specs and Replacement
Type Designator: SI7812DN
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 130 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
Package: POWERPAK-1212-8
SI7812DN substitution
- MOSFET ⓘ Cross-Reference Search
SI7812DN datasheet
si7812dn.pdf
Si7812DN Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Available 0.037 at VGS = 10 V 16e TrenchFET Power MOSFET 75 8 nC 0.046 at VGS = 4.5 V 16e Low Thermal Resistance PowerPAK Package with Small Size and Low 1.07 mm Profile PowerPAK 1212-8 APPLICATIONS... See More ⇒
si7810dn.pdf
Si7810DN Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFET 0.062 at VGS = 10 V 5.4 New Low Thermal Resistance RoHS 100 COMPLIANT 0.084 at VGS = 6 V PowerPAK 1212-8 Package with Low 4.6 1.07 mm Profile PWM Optimized APPLICATIONS Primary Side... See More ⇒
si7818dn.pdf
Si7818DN Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Available 0.135 at VGS = 10 V 3.4 PWM-Optimized TrenchFET Power MOSFET 150 20 nC 0.142 at VGS = 6 V 3.3 100 % Rg Tested Avalanche Tested APPLICATIONS PowerPAK 1212-8 Primary Side Switching... See More ⇒
Detailed specifications: SI7788DP, SI7790DP, SI7792DP, SI7794DP, SI7802DN, SI7804DN, SI7806ADN, SI7810DN, AON7410, SI7818DN, SI7820DN, SI7840BDP, SI7846DP, SI7848BDP, SI7848DP, SI7850DP, SI7852ADP
Keywords - SI7812DN MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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